Novel attributes of a dual material gate nanoscale tunnel field-effect transistor

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 404-410

  Saurabh, Sneh ^a   Kumar, M Jagadesh ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Dual material gate (DMG); off current; on current; strain; threshold voltage; tunnel field effect transistor (TFET)

Indexed keywords

CHANNEL LENGTH; CHANNEL MATERIALS; DEVICE CHARACTERISTICS; DOUBLE-GATE; DRAIN-INDUCED BARRIER LOWERING; DUAL MATERIAL GATE; GATE MATERIALS; GATE OXIDE; NANO SCALE; OFF -CURRENT; ON-CURRENTS; OUTPUT CHARACTERISTICS; POWER SUPPLY; SUBTHRESHOLD SLOPE;

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; MATERIALS; THRESHOLD VOLTAGE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79151481038     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2093142     Document Type: Article

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