HfO x bipolar resistive memory with robust endurance using ZrN x as buttom electrode

Applied Surface Science

Volumn 284, Issue , 2013, Pages 644-650

  Zhou, Qigang ^a,b   Zhai, Jiwei ^a  

^a TONGJI UNIVERSITY   (China)

^b LESHAN NORMAL UNIVERSITY   (China)

Author keywords

Filamentary conduction; Non volatile memory; Refractory transition metal nitride; Resistive memory (RRAM); Resistive switching

Indexed keywords

CHEMICAL ANALYSIS; CHEMICAL BONDS; CONDUCTIVE FILMS; ELECTRODES; HAFNIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); NITRIDES; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; RRAM; SEMICONDUCTOR STORAGE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FILAMENTARY CONDUCTION; NON-VOLATILE MEMORY; RESISTIVE MEMORY (RRAM); RESISTIVE SWITCHING; TRANSITION METAL NITRIDES;

ZIRCONIUM COMPOUNDS;

EID: 84883871633     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.07.148     Document Type: Article

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