Influence of process parameters on properties of reactively sputtered tungsten nitride thin films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 3, 2012, Pages

  Addonizio, Maria L ^a   Castaldo, Anna ^a   Antonaia, Alessandro ^a   Gambale, Emilia ^a   Iemmo, Laura ^a  

^a ENEA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; AS-LIGANDS; COMBINED ANALYSIS; DEPOSITION CONDITIONS; DEPOSITION PARAMETERS; DEPOSITION POWER; ELECTRICAL AND OPTICAL PROPERTIES; INFRARED ANALYSIS; LOW POWER; METALLIC TUNGSTEN; NITROGEN ATOM; NITROGEN CONTENT; OPTICAL ANALYSIS; PROCESS PARAMETERS; REACTIVE DC MAGNETRON SPUTTERING; RESISTIVITY MEASUREMENT; SINGLE-PHASE STRUCTURE; SPUTTERING GAS; SPUTTERING POWER; THERMALLY STABLE; TRANSFORMATION REACTIONS; TUNGSTEN NITRIDE; TUNGSTEN NITRIDE FILMS;

AMORPHOUS FILMS; CHEMISORPTION; CRYSTALLINE MATERIALS; DEPOSITION; ELECTRIC PROPERTIES; LIGANDS; METALLIC FILMS; NITROGEN; OPTICAL PROPERTIES; THIN FILMS; TUNGSTEN; TUNGSTEN COMPOUNDS;

VAPOR DEPOSITION;

EID: 84864192404     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3698399     Document Type: Article

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