Roles of interfacial TiOx N1-x layer and TiN electrode on bipolar resistive switching in TiN/ TiO2 /TiN frameworks

Applied Physics Letters

Volumn 96, Issue 22, 2010, Pages

  Kwak, June Sik ^a   Do, Young Ho ^a   Bae, Yoon Cheol ^a   Im, Hyun Sik ^b   Yoo, Jong Hee ^c   Sung, Min Gyu ^c   Hwang, Yun Taek ^c   Hong, Jin Pyo ^a  

^a Hanyang University   (South Korea)

^b Dongguk University   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; COUNTER-CLOCKWISE; CREATION AND ANNIHILATION; CURRENT LEVELS; ION DRIFTS; RESISTIVE SWITCHING; SWITCHING PHENOMENON; TIN ELECTRODES; TIO;

ENERGY DISSIPATION; OXYGEN; REDOX REACTIONS; SWITCHING SYSTEMS; TITANIUM NITRIDE;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 77953594299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3442499     Document Type: Article

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