-
1
-
-
46749093701
-
-
NNAABX 1748-3387,. 10.1038/nnano.2008.160
-
J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol. NNAABX 1748-3387 3, 429 (2008). 10.1038/nnano.2008.160
-
(2008)
Nat. Nanotechnol.
, vol.3
, pp. 429
-
-
Yang, J.J.1
Pickett, M.D.2
Li, X.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Williams, R.S.6
-
2
-
-
35748974883
-
Nanoionics-based resistive switching memories
-
DOI 10.1038/nmat2023, PII NMAT2023
-
R. Waser and M. Aono, Nature Mater. NMAACR 1476-1122 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
-
(2007)
Nature Materials
, vol.6
, Issue.11
, pp. 833-840
-
-
Waser, R.1
Aono, M.2
-
3
-
-
33748501587
-
-
TDIMD5 0163-1918
-
I. G. Baek, D. C. Kim, M. J. Lee, H. J. Kim, E. K. Yim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Char, S. O. Park, H. S. Kim, I. K. Yoo, U. -I. Chung, J. T. Moon, and B. I. Ryu, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2005, 750.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2005
, pp. 750
-
-
Baek, I.G.1
Kim, D.C.2
Lee, M.J.3
Kim, H.J.4
Yim, E.K.5
Lee, M.S.6
Lee, J.E.7
Ahn, S.E.8
Seo, S.9
Lee, J.H.10
Park, J.C.11
Char, Y.K.12
Park, S.O.13
Kim, H.S.14
Yoo, I.K.15
Chung, U.-I.16
Moon, J.T.17
Ryu, B.I.18
-
4
-
-
19944434155
-
Reproducible resistance switching in polycrystalline NiO films
-
DOI 10.1063/1.1831560
-
S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. APPLAB 0003-6951 85, 5655 (2004). 10.1063/1.1831560 (Pubitemid 40162553)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.23
, pp. 5655-5657
-
-
Seo, S.1
Lee, M.J.2
Seo, D.H.3
Jeoung, E.J.4
Suh, D.-S.5
Joung, Y.S.6
Yoo, I.K.7
Hwang, I.R.8
Kim, S.H.9
Byun, I.S.10
Kim, J.-S.11
Choi, J.S.12
Park, B.H.13
-
5
-
-
34250658118
-
Localized switching mechanism in resistive switching of atomic-layer-deposited Ti O2 thin films
-
DOI 10.1063/1.2748312
-
K. M. Kim, B. J. Choi, and C. S. Hwang, Appl. Phys. Lett. APPLAB 0003-6951 90, 242906 (2007). 10.1063/1.2748312 (Pubitemid 46934800)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.24
, pp. 242906
-
-
Kim, K.M.1
Choi, B.J.2
Hwang, C.S.3
-
6
-
-
19744383252
-
Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3
-
DOI 10.1063/1.1845598, 012107
-
T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett. APPLAB 0003-6951 86, 012107 (2005). 10.1063/1.1845598 (Pubitemid 40211571)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.1
, pp. 0121071-0121073
-
-
Fujii, T.1
Kawasaki, M.2
Sawa, A.3
Akoh, H.4
Kawazoe, Y.5
Tokura, Y.6
-
7
-
-
33751577023
-
2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
-
DOI 10.1063/1.2397006
-
M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, and N. Awaya, Appl. Phys. Lett. APPLAB 0003-6951 89, 223509 (2006). 10.1063/1.2397006 (Pubitemid 44847628)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.22
, pp. 223509
-
-
Fujimoto, M.1
Koyama, H.2
Konagai, M.3
Hosoi, Y.4
Ishihara, K.5
Ohnishi, S.6
Awaya, N.7
-
8
-
-
36549006435
-
High speed resistive switching in PtTi O2 TiN film for nonvolatile memory application
-
DOI 10.1063/1.2818691
-
C. Yoshida, K. Tsunoda, H. Noshiro, and Y. Sugiyama, Appl. Phys. Lett. APPLAB 0003-6951 91, 223510 (2007). 10.1063/1.2818691 (Pubitemid 350191677)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.22
, pp. 223510
-
-
Yoshida, C.1
Tsunoda, K.2
Noshiro, H.3
Sugiyama, Y.4
-
9
-
-
51949093158
-
-
DTPTEW 0743-1562
-
N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562 2008, 100.
-
Dig. Tech. Pap. - Symp. VLSI Technol.
, vol.2008
, pp. 100
-
-
Xu, N.1
Gao, B.2
Liu, L.F.3
Sun, B.4
Liu, X.Y.5
Han, R.Q.6
Kang, J.F.7
Yu, B.8
-
10
-
-
34147108217
-
Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides
-
DOI 10.1103/PhysRevLett.98.146403
-
Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. PRLTAO 0031-9007 98, 146403 (2007). 10.1103/PhysRevLett.98.146403 (Pubitemid 46557459)
-
(2007)
Physical Review Letters
, vol.98
, Issue.14
, pp. 146403
-
-
Nian, Y.B.1
Strozier, J.2
Wu, N.J.3
Chen, X.4
Ignatiev, A.5
-
11
-
-
68249119187
-
-
APPLAB 0003-6951,. 10.1063/1.3191674
-
M. K. Yang, J. W. Park, T. K. Ko, and J. K. Lee, Appl. Phys. Lett. APPLAB 0003-6951 95, 042105 (2009). 10.1063/1.3191674
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 042105
-
-
Yang, M.K.1
Park, J.W.2
Ko, T.K.3
Lee, J.K.4
-
12
-
-
58149268896
-
-
JAPIAU 0021-8979,. 10.1063/1.3032896
-
Y. H. Do, J. S. Kwak, J. P. Hong, K. H. Jung, and H. S. Im, J. Appl. Phys. JAPIAU 0021-8979 104, 114512 (2008). 10.1063/1.3032896
-
(2008)
J. Appl. Phys.
, vol.104
, pp. 114512
-
-
Do, Y.H.1
Kwak, J.S.2
Hong, J.P.3
Jung, K.H.4
Im, H.S.5
-
13
-
-
69949132864
-
-
APPLAB 0003-6951,. 10.1063/1.3224179
-
Y. H. Do, J. S. Kwak, Y. C. Bae, K. H. Jung, H. S. Im, and J. P. Hong, Appl. Phys. Lett. APPLAB 0003-6951 95, 093507 (2009). 10.1063/1.3224179
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 093507
-
-
Do, Y.H.1
Kwak, J.S.2
Bae, Y.C.3
Jung, K.H.4
Im, H.S.5
Hong, J.P.6
-
14
-
-
0343885624
-
-
JESRAW 0368-2048,. 10.1016/S0368-2048(99)00061-4
-
O. Contreras, A. Duarte-Moller, G. A. Hirata, and M. Avalos-Borja, J. Electron Spectrosc. Relat. Phenom. JESRAW 0368-2048 105, 129 (1999). 10.1016/S0368-2048(99)00061-4
-
(1999)
J. Electron Spectrosc. Relat. Phenom.
, vol.105
, pp. 129
-
-
Contreras, O.1
Duarte-Moller, A.2
Hirata, G.A.3
Avalos-Borja, M.4
-
15
-
-
0003748653
-
-
EMPMD Monograph Series No. 2, edited by M. M. Disko, C. C. Ahn, and B. Fultz (TMS, Warrendale)
-
Transmission Electron Energy Loss Spectrometry in Materials Science, EMPMD Monograph Series No. 2, edited by, M. M. Disko, C. C. Ahn, and, B. Fultz, (TMS, Warrendale, 1992).
-
(1992)
Transmission Electron Energy Loss Spectrometry in Materials Science
-
-
-
16
-
-
33845988754
-
Power stability of AlGaN/GaN HFETs at 20 W/mm in the pinched-off operation mode
-
DOI 10.1109/LED.2006.887642
-
C. Y. Lin, C. Y. Wu, C. Y. Wu, T. C. Lee, F. L. Yang, C. Hu, and T. Y. Tseng, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 366 (2007). 10.1109/LED.2006.887642 (Pubitemid 46043853)
-
(2007)
IEEE Electron Device Letters
, vol.28
, Issue.1
, pp. 5-7
-
-
Koudymov, A.1
Wang, C.X.2
Adivarahan, V.3
Yang, J.4
Simin, G.5
Khan, M.A.6
-
17
-
-
57349143757
-
-
APPLAB 0003-6951,. 10.1063/1.3039079
-
W. Guan, M. Liu, S. Long, Q. Liu, and W. Wang, Appl. Phys. Lett. APPLAB 0003-6951 93, 223506 (2008). 10.1063/1.3039079
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 223506
-
-
Guan, W.1
Liu, M.2
Long, S.3
Liu, Q.4
Wang, W.5
-
18
-
-
36549097149
-
-
JAPIAU 0021-8979,. 10.1063/1.346568
-
M. Mandl and H. Hoffmann, J. Appl. Phys. JAPIAU 0021-8979 68, 2127 (1990). 10.1063/1.346568
-
(1990)
J. Appl. Phys.
, vol.68
, pp. 2127
-
-
Mandl, M.1
Hoffmann, H.2
-
19
-
-
63749096418
-
-
JAPIAU 0021-8979,. 10.1063/1.3055414
-
B. Sun, Y. X. Liu, L. F. Liu, N. Xu, Y. Wang, X. Y. Liu, R. Q. Han, and J. F. Kang, J. Appl. Phys. JAPIAU 0021-8979 105, 061630 (2009). 10.1063/1.3055414
-
(2009)
J. Appl. Phys.
, vol.105
, pp. 061630
-
-
Sun, B.1
Liu, Y.X.2
Liu, L.F.3
Xu, N.4
Wang, Y.5
Liu, X.Y.6
Han, R.Q.7
Kang, J.F.8
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