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Journal of the Electrochemical Society

Volumn 153, Issue 7, 2006, Pages

Effects of postdeposition annealing on the characteristics of Hf Ox Ny dielectrics on germanium and silicon substrates

(6) Cheng, Chao Ching a Chien, Chao Hsin a,b Chen, Ching Wei a Hsu, Shih Lu b Yang, Chun Hui b Chang, Chun Yen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; GERMANIUM; HAFNIUM COMPOUNDS; MOS DEVICES; SILICON;

DIELECTRIC RELIABILITY; ELECTRON-TRAPPING SITES; POSTDEPOSITION ANNEALING (PDA); SILICON SUBSTRATES;

DIELECTRIC MATERIALS;

EID: 33744821926 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2203097 Document Type: Article

Times cited : (16)

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