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Applied Physics Letters

Volumn 101, Issue 1, 2012, Pages

Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content

(3) Chang, W Z a Chu, J P a Wang, S F b

a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL STRESS; FILAMENTARY CONDUCTION; NON-VOLATILE MEMORY APPLICATION; ORDERS OF MAGNITUDE; OXYGEN CONTENT; OXYGEN EFFECT; OXYGEN VACANCY CONCENTRATION; RESISTANCE RATIO; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SCANDATES;

ELECTRIC PROPERTIES; OXYGEN; SWITCHING SYSTEMS;

AMORPHOUS FILMS;

EID: 84863707456 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4732079 Document Type: Article

Times cited : (19)

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