SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

Role of TaON interface for CuxO resistive switching memory based on a combined model

(6) Zhou, P a Yin, M a Wan, H J a Lu, H B a Tang, T A a Lin, Y Y a

a FUDAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; MOLECULAR ORBITALS; PHOTOELECTRON SPECTROSCOPY; SWITCHING; SWITCHING SYSTEMS;

COMBINED MODELS; ELECTRICAL CHARACTERISTICS; EMBEDDED APPLICATIONS; LOW-RESISTANCE STATE; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SWITCHING BEHAVIORS; TRANSITIONAL METAL OXIDES; TRANSMISSION ELECTRONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 59849106836 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3078824 Document Type: Article

Times cited : (61)

References (9)

1
- 46749093701
- 1748-3387 10.1038/nnano.2008.160.
- J. Yang, M. Pickett, X. M. Li, D. Ohlberg, D. Stewart, and R. Williams, Nat. Nanotechnol. 1748-3387 10.1038/nnano.2008.160 3, 429 (2008).
- (2008) Nat. Nanotechnol. , vol.3 , pp. 429
- Yang, J.¹ Pickett, M.² Li, X.M.³ Ohlberg, D.⁴ Stewart, D.⁵ Williams, R.⁶

2
- 41749100369
- 0741-3106 10.1109/LED.2008.917109.
- H. B. Lv, M. Yin, X. F. Fu, Y. L. Song, L. Tang, P. Zhou, T. A. Tang, B. A. Chen, and Y. Y. Lin, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2008.917109 29, 309 (2008).
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 309
- Lv, H.B.¹ Yin, M.² Fu, X.F.³ Song, Y.L.⁴ Tang, L.⁵ Zhou, P.⁶ Tang, T.A.⁷ Chen, B.A.⁸ Lin, Y.Y.⁹

3
- 48249096013
- 0003-6951 10.1063/1.2958234.
- S. I. Kim, J. H. Lee, Y. W. Chang, S. S. Hwang, and K. H. Yoo, Appl. Phys. Lett. 0003-6951 10.1063/1.2958234 93, 033503 (2008).
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033503
- Kim, S.I.¹ Lee, J.H.² Chang, Y.W.³ Hwang, S.S.⁴ Yoo, K.H.⁵

4
- 36048964246
- 0003-6951 10.1063/1.2749846.
- K. M. Kim, B. J. Choi, Y. C. Shin, S. Choi, and C. S. Hwang, Appl. Phys. Lett. 0003-6951 10.1063/1.2749846 91, 012907 (2007).
- (2007) Appl. Phys. Lett. , vol.91 , pp. 012907
- Kim, K.M.¹ Choi, B.J.² Shin, Y.C.³ Choi, S.⁴ Hwang, C.S.⁵

5
- 34047263784
- 0003-6951 10.1063/1.2720747.
- Y. Ogimoto, Y. Tamai, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 0003-6951 10.1063/1.2720747 90, 143515 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 143515
- Ogimoto, Y.¹ Tamai, Y.² Kawasaki, M.³ Tokura, Y.⁴

6
- 44649133811
- 1071-1023 10.1116/1.2927922.
- P. Zhou, H. B. Lv, M. Yin, L. Tang, Y. L. Song, T. A. Tang, Y. Y. Lin, A. Bao, A. Wu, S. Cai, H. Wu, C. Liang, and M. H. Chi, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2927922 26, 1030 (2008).
- (2008) J. Vac. Sci. Technol. B , vol.26 , pp. 1030
- Zhou, P.¹ Lv, H.B.² Yin, M.³ Tang, L.⁴ Song, Y.L.⁵ Tang, T.A.⁶ Lin, Y.Y.⁷ Bao, A.⁸ Wu, A.⁹ Cai, S.¹⁰ Wu, H.¹¹ Liang, C.¹² Chi, M.H.¹³

7
- 52949114177
- 0042-207X
- K. Kato, H. Toyota, Y. Jin, and T. Ono, Vacuum 83, 592 (2008). 0042-207X
- (2008) Vacuum , vol.83 , pp. 592
- Kato, K.¹ Toyota, H.² Jin, Y.³ Ono, T.⁴

8
- 34247877733
- 0003-6951 10.1063/1.2734900.
- X. Wu, P. Zhou, J. Li, L. Y. Chen, H. B. Lv, and Y. Y. Lin, Appl. Phys. Lett. 0003-6951 10.1063/1.2734900 90, 183507 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 183507
- Wu, X.¹ Zhou, P.² Li, J.³ Chen, L.Y.⁴ Lv, H.B.⁵ Lin, Y.Y.⁶

9
- 59849129795
- IEEE Symposium on VLSI Technol, (unpublished),.
- N. Xu, B. Gao, L. F. Liu, X. Y. Bing S. Liu, R. Q. Han, J. F. Kang, and B. Yu, IEEE Symposium on VLSI Technol, 2008 (unpublished), p. 228.
- (2008) , pp. 228
- Xu, N.¹ Gao, B.² Liu, L.F.³ Bing, X.Y.⁴ Liu, S.⁵ Han, R.Q.⁶ Kang, J.F.⁷ Yu, B.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.