Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 230-232

  Yu, H Y ^a   Lim, H F ^a   Chen, J H ^a   Li, M F ^a   Zhu, Chunxiang ^a   Tung, C H ^b   Du, A Y ^b   Wang, W D ^c   Chi, D Z ^c   Kwong, D L ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

HfN; Metal gate; Midgap work function; MOSFET's; TaN

Indexed keywords

ELECTRIC PROPERTIES; ELECTRODES; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; MOS DEVICES; PHYSICAL VAPOR DEPOSITION; SILICA; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

ADVANCED MOS DEVICES; HAFNIUM NITRIDE GATE ELECTRODE; MIDGAP WORK FUNCTION; TANTALUM NITRIDE;

HAFNIUM COMPOUNDS;

EID: 0037766775     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812143     Document Type: Letter

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