Transparent cosputtered ITO-ZnO electrode ohmic contact to n-type ZnO for ZnO/GaN heterojunction light-emitting diode

Journal of Physics D: Applied Physics

Volumn 46, Issue 31, 2013, Pages

  Ho, Chia Cheng ^a   Lai, Li Wei ^b   Lee, Ching Ting ^c   Yang, Kai Chao ^a   Lai, Bo Ting ^a   Liu, Day Shan ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY DEPTH PROFILES; CONTACT ELECTRODES; CONTACT SYSTEMS; ELECTRON CARRIER; NEAR ULTRAVIOLET; OUT-DIFFUSION; OXYGEN ATOM; RAPID THERMAL ANNEALING (RTA);

AUGER ELECTRON SPECTROSCOPY; CONTACT RESISTANCE; ELECTRIC CONTACTORS; HETEROJUNCTIONS; LIGHT EMITTING DIODES; OHMIC CONTACTS; RAPID THERMAL ANNEALING; X RAY DIFFRACTION; ZINC;

ZINC OXIDE;

EID: 84880377796     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/31/315102     Document Type: Article

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