Materials and process development for ZnMgO/ZnO light-emitting diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 1048-1052

  Wang, Yu Lin ^a   Ren, Fan ^a   Kim, H S ^a   Norton, David P ^a,b   Pearton, Steve J ^a  

^a University of Florida   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

Double heterostructure; ZnO light emitting diodes

Indexed keywords

CORUNDUM; GALLIUM NITRIDE; HYDROGEN; LIGHT; LIGHT EMISSION; NONMETALS; OPTICAL DESIGN; PASSIVATION; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR JUNCTIONS; ZINC ALLOYS; ZINC OXIDE;

ALGAN/GAN; BAND EDGES; C-PLANE SAPPHIRE; DOUBLE HETEROSTRUCTURE; ELECTROLUMINESCENCE EMISSIONS; EXCITONIC TRANSITIONS; HETERO STRUCTURES; HIGHER EMISSION INTENSITY; LOWER COST; P-N JUNCTIONS; PROCESS DEVELOPMENTS; ROOM TEMPERATURES; SURFACE CONDUCTION; SURFACE PASSIVATION; UV EMITTERS; UV LEDS; WET-ETCHING; ZNO LIGHT-EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 48949099451     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.919736     Document Type: Article

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