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Journal of the Electrochemical Society

Volumn 157, Issue 5, 2010, Pages

Electroluminescence from solution grown n-ZnO nanorod/p-GaN- heterostructured light emitting diodes

(6) Dalui, Saikat a Lin, Chih Chien a Lee, Hsin Ying b Yen, Shiu Fang c Lee, Yao Jung c Lee, Ching Ting a

a Institute of Microelectronics (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITED; CURRENT-VOLTAGE MEASUREMENTS; DEFECT-RELATED EMISSION; DIODE STRUCTURE; FORWARD BIAS; GAN LAYERS; LOW TEMPERATURES; LOW-COST SOLUTION; OPTICAL QUALITIES; PEAK WAVELENGTH; ROOM TEMPERATURE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SAPPHIRE SUBSTRATES; TURN ON VOLTAGE; VIOLET REGION; VISIBLE REGION; WELL-ALIGNED; ZNO; ZNO NANOROD ARRAYS;

DIODES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MICROSTRUCTURE; NANORODS; ORGANOMETALLICS; STOICHIOMETRY; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 77951173657 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3352985 Document Type: Article

Times cited : (21)

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