Electroluminescence from n-ZnO:Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers

Journal of Physics D: Applied Physics

Volumn 45, Issue 48, 2012, Pages

  Zhang, Lichun ^a,b   Li, Qingshan ^a,b   Shang, Liang ^b   Zhang, Zhongjun ^a   Huang, Ruizhi ^a   Zhao, Fengzhou ^a  

^a LUDONG UNIVERSITY   (China)

^b QUFU NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DIAGRAMS; BLUE EMISSION; INTERFACIAL LAYER; ULTRAVIOLET EMISSION;

DIODES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HETEROJUNCTIONS; PULSED LASER DEPOSITION; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84869066412     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/48/485103     Document Type: Article

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