Near-UV emitting diodes based on a transparent p-n junction composed of heteroepitaxially grown p-SrCu2O2 and n-Zno

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 I, 2002, Pages 496-502

  Hosono, H ^a,b   Ohta, H ^a   Hayashi, K ^a   Orita, M ^a   Hirano, M ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Interfaces; A3. Laser epitaxy; B2. Semiconductoring II VI materials; B3. Light emitting diodes

Indexed keywords

CHEMICAL BONDS; CRYSTAL LATTICES; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT EMISSION; PULSED LASER DEPOSITION; SINGLE CRYSTALS; STRONTIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; ULTRAVIOLET RADIATION; ZINC OXIDE;

HETEROEPITAXIAL GROWTH; LASER EPITAXY;

LIGHT EMITTING DIODES;

EID: 0036530526     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01951-0     Document Type: Article

References (13)

1. TCO special issue