Atomic layer deposited ZnO:Al for nanostructured silicon heterojunction solar cells

Solar Energy Materials and Solar Cells

Volumn 103, Issue , 2012, Pages 62-68

  Steglich, M ^a   Bingel, A ^b   Jia, G ^a   Falk, F ^a  

^a LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED OPTICS AND PRECISION ENGINEERING   (Germany)

Author keywords

Atomic layer deposition; Black Silicon; Nanostructure; Nanowire; Silicon heterojunction; ZnO:Al

Indexed keywords

A-SI:H; ALUMINUM-DOPED ZINC OXIDE; ATOMIC LAYER DEPOSITED; BLACK SILICON; COMPLEX DIELECTRIC FUNCTIONS; CONFORMAL COATINGS; I-V MEASUREMENTS; LAYER STRUCTURES; NANOSTRUCTURED SILICON; OPTICAL SPECTRA; P-TYPE; PREFERENTIAL GROWTH; RECTIFICATION BEHAVIOR; SI NANOWIRE; SILICON HETEROJUNCTIONS; SOLAR CELL STRUCTURES; TEST STRUCTURE; ZNO; ZNO CRYSTALS;

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; CRYSTALLOGRAPHY; HETEROJUNCTIONS; NANOSTRUCTURES; NANOWIRES; OPEN CIRCUIT VOLTAGE; SILICON;

ZINC OXIDE;

EID: 84860520926     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.04.004     Document Type: Article

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