MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode

Thin Solid Films

Volumn 517, Issue 17, 2009, Pages 5054-5056

  Chang, S P ^a   Chuang, R W ^a   Chang, S J ^a   Chiou, Y Z ^b   Lu, C Y ^a  

^a Center for Micro/Nano Science and Technology   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

GaN; Heterojunction; Light emitting diode; ZnO

Indexed keywords

BROADBAND EMISSION; DEEP-LEVEL DEFECTS; FORWARD BIAS; GAN; GAN EPITAXIAL LAYERS; IV CHARACTERISTICS; P-GAN FILMS; RAMAN SPECTRA; ROOM TEMPERATURE; SPECTRAL REGION; ZNO;

CURRENT DENSITY; DIODES; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; EPITAXIAL LAYERS; GALLIUM ALLOYS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

GALLIUM NITRIDE;

EID: 65749092929     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.059     Document Type: Article

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