Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2943-2945

  Alivov, Ya I ^a   Van Nostrand, J E ^b   Look, D C ^c   Chukichev, M V ^d   Ataev, B M ^e  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c WRIGHT STATE UNIVERSITY   (United States)

^d MOSCOW STATE UNIVERSITY   (Russian Federation)

^e INSTITUTE OF PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTROLUMINESCENCE; GALLIUM NITRIDE; HETEROJUNCTIONS; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; ZINC OXIDE;

LOW CURRENT RANGE;

LIGHT EMITTING DIODES;

EID: 0142167493     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1615308     Document Type: Article

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