Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector

Applied Physics Letters

Volumn 101, Issue 3, 2012, Pages

  Ivanoff Reyes, Pavel ^a   Ku, Chieh Jen ^a   Duan, Ziqing ^a   Xu, Yi ^b   Garfunkel, Eric ^b   Lu, Yicheng ^a  

^a RUTGERS UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK GATES; CHANNEL SURFACE; CUTOFF WAVELENGTHS; IMAGING ARRAYS; ON-OFF RATIO; OXYGEN PLASMA TREATMENTS; PERSISTENT PHOTOCONDUCTIVITY; RECOVERY TIME; REJECTION RATIOS; THIN-FILM TRANSISTOR (TFTS); UV PHOTODETECTORS; UV-VISIBLE; XPS MEASUREMENTS; ZNO THIN FILM;

ASPECT RATIO; PHOTOCONDUCTIVITY; PHOTODETECTORS; PLASMA APPLICATIONS; THIN FILM TRANSISTORS; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 84864245940     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737648     Document Type: Article

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