Enhanced oxygen out-diffusion in silicon crystal doped with germanium

Journal of Applied Physics

Volumn 102, Issue 6, 2007, Pages

  Chen, Jiahe ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Fan, Ruixin ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DIFFUSION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON;

CZOCHRALSKI SILICON; GERMANIUM DOPING; OUT-DIFFUSION;

SEMICONDUCTING GERMANIUM;

EID: 34848822207     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2781408     Document Type: Article

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