Stabilization of Ge-rich defect complexes originating from e centers in Si1-x Gex:P

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 13, 2010, Pages

  Kilpelainen S ^a   Kuitunen, K ^a   Tuomisto, F ^a   Slotte, J ^a   Radamson, H H ^b   Kuznetsov, A Yu ^c  

^a AALTO UNIVERSITY   (Finland)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77955191149     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.132103     Document Type: Article

References (24)

1. R. Arghavan and H. M'saad, Solid State Technol. 52, 26 (2008).
2. E. Kasper and D. J. Paul, Silicon-Germanium Heterostructure Devices: Basics and Realisations (Springer, Berlin, 2005).
3. V. Ranki, J. Nissilä, and K. Saarinen, Phys. Rev. Lett. 88, 105506 (2002). 10.1103/PhysRevLett.88.105506
4. S. D. Brotherton and P. Bradley, J. Appl. Phys. 53, 5720 (1982). 10.1063/1.331460
5. A. Nylandsted Larsen, Phys. Rev. Lett. 97, 106402 (2006). 10.1103/PhysRevLett.97.106402
6. J. Fage-Pedersen, A. Nylandsted Larsen, and A. Mesli, Phys. Rev. B 62, 10116 (2000). 10.1103/PhysRevB.62.10116
7. E. V. Monakhov, A. Y. Kuznetsov, and B. G. Svensson, J. Appl. Phys. 87, 4629 (2000). 10.1063/1.373115
8. E. V. Monakhov, A. Y. Kuznetsov, and B. G. Svensson, Phys. Rev. B 63, 245322 (2001). 10.1103/PhysRevB.63.245322
9. P. Kringhøj and A. Nylandsted Larsen, Phys. Rev. B 52, 16333 (1995). 10.1103/PhysRevB.52.16333
10. M. Rummukainen, Phys. Rev. B 73, 165209 (2006). 10.1103/PhysRevB.73. 165209
11. K. Kuitunen, F. Tuomisto, and J. Slotte, Phys. Rev. B 76, 233202 (2007). 10.1103/PhysRevB.76.233202
12. S.-L. Sihto, Phys. Rev. B 68, 115307 (2003). 10.1103/PhysRevB.68.115307
13. A. Chroneos, Phys. Rev. B 78, 195201 (2008). 10.1103/PhysRevB.78.195201
14. A. Nylandsted Larsen and P. Kringhøj, Appl. Phys. Lett. 68, 2684 (1996). 10.1063/1.116281
15. P. Laitinen, I. Riihimäki, and J. Räisänen, Phys. Rev. B 68, 155209 (2003). 10.1103/PhysRevB.68.155209
16. A. R. Peaker, J. Phys.: Condens. Matter 17, S2293 (2005). 10.1088/0953-8984/17/22/018
17. H. Bracht and A. Chroneos, J. Appl. Phys. 104, 076108 (2008). 10.1063/1.2996284
18. S. Brotzmann and H. Bracht, J. Appl. Phys. 103, 033508 (2008). 10.1063/1.2837103
19. D. Mathiot and J. C. Dupuy, Appl. Phys. Lett. 59, 93 (1991). 10.1063/1.105534
20. N. R. Zangenberg, J. Appl. Phys. 94, 3883 (2003). 10.1063/1.1602564
21. J. S. Christensen, J. Appl. Phys. 94, 6533 (2003). 10.1063/1.1622771
22. R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors (Springer, Berlin, 1999).
23. K. Saarinen, P. Hautojärvi, and C. Corbel, in Identification of Defects in Semiconductors, edited by, M. Stavola, (Academic Press, New York, 1998).
24. The 3 d electrons of Ge enhance the annihilation signal in the W parameter range compared to the 2 p electrons of Si.