Oxygen-containing radiation defects in Si1-xGex

Semiconductors

Volumn 34, Issue 9, 2000, Pages 989-993

  Pomozov, Yu V ^a   Sosnin, M G ^a   Khirunenko, L I ^a   Yashnik, V I ^a   Abrosimov, N V ^b,c   Schroder W ^c   Hohne M ^c  

^a INSTITUTE OF PHYSICS   (Ukraine)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034258992     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1309399     Document Type: Article

References (16)

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