Composition dependence of Si and Ge diffusion in relaxed Si1-x Gex alloys

Journal of Applied Physics

Volumn 107, Issue 7, 2010, Pages

  Kube, R ^a   Bracht, H ^a   Hansen, J Lundsgaard ^b   Larsen, A Nylandsted ^b   Haller, E E ^c   Paul, S ^d   Lerch, W ^d  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b AARHUS UNIVERSITY   (Denmark)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENTHALPIES; ARRHENIUS TYPE TEMPERATURE DEPENDENCE; COMPOSITION DEPENDENCE; CONCENTRATION PROFILES; GE ATOM; GE CONCENTRATIONS; GE CONTENT; GE DIFFUSION; GENERAL TRENDS; HETEROSTRUCTURES; NONLINEAR BEHAVIOR; SELF-DIFFUSION; SI-GE ALLOYS; SILICON GERMANIUM; TEMPERATURE RANGE; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY;

ANTIMONY; ARSENIC; CERIUM ALLOYS; DIFFUSION; ENTHALPY; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; ISOTOPES; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SILICON; VACANCIES;

SILICON ALLOYS;

EID: 77951609830     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3380853     Document Type: Article

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