Vacancy-oxygen complex in Si1-xGex crystals

Applied Physics Letters

Volumn 82, Issue 16, 2003, Pages 2652-2654

  Markevich, V P ^a   Peaker, A R ^a   Murin, L I ^b   Abrosimov, N V ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ENTHALPY; INFRARED RADIATION; LATTICE CONSTANTS;

CZOCHRALSKI METHOD;

SILICON COMPOUNDS;

EID: 0037962867     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569422     Document Type: Article

References (30)

1. G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961), J. W. Corbett, G. D. Watkins, R. M. Chrenko, R. G. McDonald, ibid. 121, 1015 (1961).
2. G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961), J. W. Corbett, G. D. Watkins, R. M. Chrenko, R. G. McDonald, ibid. 121, 1015 (1961).
3. R. E. Whan, Appl. Phys. Lett. 6, 221 (1965); Phys. Rev. 140, A690 (1965).
4. R. E. Whan, Appl. Phys. Lett. 6, 221 (1965); Phys. Rev. 140, A690 (1965).
5. J. Coutinho, R. Jones, P. R. Briddon, and S. Öberg, Phys. Rev. B 62, 10824 (2000).
6. P. Vanmeerbeek and P. Clauws, Phys. Rev. B 64, 245201 (2001).
7. V. P. Markevich, I. D. Hawkins, A. R. Peaker, V. V. Litvinov, L. I. Murin, L. Dobaczewski, and J. L. Lindström, Appl. Phys. Lett. 81, 1821 (2002).
8. Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, V. I. Yashnik, N. V. Abrosimov, W. Schröder, and M. Höhne, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 34, 1030 (2000) [Semiconductors 36, 989 (2000)].
9. N. V. Abrosimov, S. N. Rossolenko, V. Alex, A Gerhardt, and W. Shröder, J. Cryst. Growth 166, 657 (1996).
10. S. D. Brotherton and P. Bradley, J. Appl. Phys. 53, 5720 (1982).
11. G. A. Samara, Phys. Rev. B 36, 4841 (1987).
12. L. W. Song, B. W. Benson, and G. D. Watkins, Appl. Phys. Lett. 51, 1155 (1987).
13. p≥10 ns, we could not determine the capture cross section of the V-O complex more precisely.
14. G. D. Watkins, in Lattice Defects in Semiconductors 1974, Inst. Phys. Conf. Ser. No 23, edited by F. A. Huntley (IOP, Bristol, 1975), p. 1.
15. A. Brelot, in Radiation Damage and Defects in Semiconductors, Inst. Phys. Conf. Ser. No 16, edited by J. E. Whitehouse (IOP, London, 1973), p, 191.
16. L. I. Khirunenko, V. I. Shakhovtsov, V. V. Shumov, and V. I. Yashnik, Mater. Sci. Forum 196-201, 1381 (1995).
17. C. V. Budtz-Jørgensen, P. Kringhøj, A. Nylansted Larsen, and N. V. Abrosimov, Phys. Rev. B 58, 1110 (1998).
18. H. Yamada-Kaneta, C. Kaneta, and T. Ogawa, Phys. Rev. B 47, 9338 (1993).
19. D. Wauters and P. Clauws, Mater. Sci. Forum 258-263, 103 (1997).
20. L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, N. V. Abrosimov, M. Höhne, and W. Shröder, Physica B 273-274, 305 (1999).
21. J. Weber and M. I. Alonso, Phys. Rev. B 40, 5683 (1989).
22. V. Alex, S. Finkbeiner, and J. Weber, J. Appl. Phys. 79, 6943 (1996).
23. n + 0.01 eV.
24. Y. Yamamoto, M. Nomura, and H. Fjiwara, Jpn. J. Appl. Phys., Part 1 16, 397 (1977).
25. J. P. Dismukes, L. Ekstrom, and R. J. Paff, J. Phys. Chem. 68, 3021 (1964).
26. P. Venezuela, G. M. Dalpian, A. J. R. da Silva, and A. Fazzio, Phys. Rev. B 64, 193202 (2001).
27. I. Yonenaga and M. Sakurai, Phys. Rev. B 64, 113206 (2001).
28. L. Pauling, The Nature of the Chemical Bond (Cornell University Press, Ithaca, NY, 1967).
29. L. Vegard, Z. Phys. 5, 17 (1921).
30. J. C. Aubry, T. Tyliszczak, A. P. Hitchcock, J.-M. Baribeau, and T. E. Jackman, Phys. Rev. B 59, 12872 (1999).