SiGe alloys and heterojunctions - extending the performance of Si devices

Current Opinion in Solid State and Materials Science

Volumn 2, Issue 1, 1997, Pages 48-53

  Kasper, Erich ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

BJT bipolar junction transistor; CMOS complementary metal oxide silicon (circuit); CVD chemical vapour deposition; HBT heterobipolar transistor; IC integrated circuits; MBE molecular beam epitaxy; MODFET modulation doped field effect transistor

Indexed keywords

EID: 0002905440     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(97)80104-0     Document Type: Article

References (48)

1. Iwai H. Recent advances and future trends of ULSI technologies. Baccaroni G, Rudan M. Proceedings at the European Solid State Device Research Conference (ESSDERC 96): 1996 Sept 9-11; Bologna, Italy. 1996;45-52 Editions Frontieres, Gif-sur-Yvette.
2. Kasper E. SiGe. EMIS Datareviews Series. 12:1995;IEE/INSPEC (Institute of Electrical Engineers, Stevenage.
3. Kasper E. Group IV heterostructure physics and devices. Lourtioz JM, Meyerson B, Abstreiter G. Proceedings European Material Research Society (E-MRS) Spring Meeting: 1996 Jun 4-7; Strasbourg. 1996;. Symposium D: Proceedings.
4. Wang KL, Thomas G, Tanner O. SiGe band engineering for MOS, CMOS and quantum effect devices. J Mater Sci Mater Electronics. 6:1995;311-324.
5. Kasper E. Silicium germanium heterodevices. Appl Surf Sci. 102:1996;189-193.
6. Chieh YS, Krusius P, Green D, Ötztürk M. Low resistance bandgap-engineered W/SiGe/Si contacts. IEEE Electron Device Lett. 17:1996;335-357.
7. O'Neill AG, Antoniadis DA. Deep submicron CMOS based on silicon germanium technology. IEEE Trans Electron Devices. 43:1996;911-918. The advantages to be gained by using SiGe in CMOS technology are examined by two-dimensional computer simulation. But also as important the role of p- and n-channel devices in a logic system architecture is considered. of outstanding interest.
8. Werner K, Storm A, Butzke S, Maes JW, van Roy M, Aikemade P, Algra E, Somers M, de Lange B, van der Drift E, Ziljstra T, Radelaar S. Gas source MBE growth of Si/SiGe device materials. J Cryst Growth. 164:1996;223-234.
9. 0.2. Appl Phys Lett. 68:1996;791-793.
10. Kringhøj P, Larsen AN, Shirayev SY. Diffusion of Sb in strained and relaxed Si and SiGe. Phys Rev Lett. 76:1996;3372-3375.
11. Nützel JF, Abstreiter G. Comparison of P and Sb as n-dopants for Si molecular beam epitaxy. J Appl Phys. 78:1995;937-940.
12. Li Y, Hembree GG, Venables JA. Quantitative Auger electron spectroscopic analysis of Ge surface segregation in Si/GeSi(100) heterostructures. Appl Phys Lett. 67:1995;276-278.
13. Chen H, Guo LW, Cui Q, Hu Q, Huang G, Zhou JM. Low-temperature buffer layer for growth of a low dislocation-density SiGe layer on Si by molecular beam epitaxy. J Appl Phys. 79:1996;1167-1169.
14. Carlino E, Giannini C, Gerardi C, Tapfer L, Mäder KA, Känel H. Strain relaxation of Si/Ge multilayer: coherent islands formation and their evolution as a function of the strain. J Appl Phys. 79:1996;1441-1447.
15. Theiss SK, Chen DM, Golovchenko JA. Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy. Appl Phys Lett. 66:1995;448-450. The lattice spacing of Ge islands was measured by tunneling microcscopy, of special interest.
16. Apetz R, Vescan L, Hartmann A, Dieker C, Lüth H. Photoluminescence and electroluminescence of SiGe dots fabricated by Island growth. Appl Phys Lett. 66:1995;445-447. The SiGe dot structure in this investigation was fabricated by deposition using the Stranski-Krastanov growth mode (islands on a wetting layer). of special interest.
17. Tang YS, Ni WX, Sotomayor Torres CM, Hanson GV. Photoluminescence and electroluminescence study of Si-SiGe quantum dots. Appl Surf Sci. 102:1996;372-376.
18. Tersoff J, Teichert C, Legally MG. Self-organization in growth of quantum dot superlattices. Phys Rev Lett. 76:1996;1675-1678. The surface strain caused by underlying strained islands influences the island nucleation of the next strained layer. A general concept is given why this correlated nucleation increase the uniformity of the islands which is important in self-ordering of nanometer structures. of outstanding interest.
19. Guarin FJ, Iyer SS, Powell AR, Ek BA. Growth and strain symmetrization of Si/Ge/C/Sn quaternary alloys by molecular epitaxy. Appl Phys Lett. 68:1996;3608-3610.
20. Orner BA, Hits D, Kolodzey J, Guarin FJ, Powell AR, Iyer SS. Optical absorption in alloys of Si, Ge C, and Sn. J Appl Phys. 79:1996;8656-6659.
21. Brunner K, Eberl K, Winter W. Near bandedge photoluminescence from pseudomorphic SiC/Si quantum well structures. Phys Rev Lett. 76:1996;303-306.
22. 1-y double well structures on Si substrates. Appl Phys Lett. 69:1996;1279-1281.
23. Nguyen-Ngoc D, Sunderland DA, Ahlgren DC, Jeng SJ, Gilbert MM, Malinowski JC, Schonenberg KT, Stein KS, Meyerson BS, Harame DL. A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications. Appl Surf Sci. 102:1996;194-201. This paper describes in integration of HBT's in analog and mixed signal circuits. A bipolar/CMOS (BICMOS) technology has been used which delivers besides the active devices (HBT, MOS) a full suit of passive devices (resistance, capacitance, inductance) and many level metallization. of special interest.
24. max value, clearly above 100 GHz, was extrapolated from the lower frequency diode. of outstanding interest.
25. Schuppen A, Gruhle A, Kibbel H, Kanig U. Mesa and planar SiGe-HBTs on MBE-wafers. J Mater Sci. 6:1995;298-305.
26. Cressler JD, Vempati L, Babcock JA, Jaeger RC, Harame DL. Low-frequency noise characteristics of UHV/CVD Epitaxial Si- and SiGe-base bipolar transistors. IEEE Electron Device Lett. 17:1996;13-15. Low frequency noise dominates the noise spectrum up to a corner frequency which should be as low as possible. In this respect SiGe HBTs in this work are superior to Si-MOS, GaAs-MESFET's and comparable to the best Si-BJT's. of special interest.
27. Geppert W, Schreiber HU. 24 Gbit/s demultiplexer IC using oxide planarised Si/SiGe heterojunction bipolar transistors. Electronics Lett. 32:1996;446-448.
28. Neugroschel A, Sah CT, Ford JM, Steele J, Tang R, Stein C. Comparison of time to failure to GeSi and Si bipolar transistors. IEEE Electron Device Lett. 17:1996;211-213.
29. Raymond JE, Slotboom JW, Prujimboom A, de Boer WB, Timmering CE, Cowern NB. On the optimization of SiGe-base bipolar transistors. IEEE Trans Electron Devices. 43:1996;1518-1524.
30. x, and ion implanted bases. IEEE Trans Electron Devices. 43:1996;774-783.
31. xSi HBT's with heavy+ base doping. IEEE Trans Electron Devices. 43:1996;457-466.
32. Lanzerotti LD, St Amour A, Liu CW, Sturm JC, Watanabe JK, Theodore D. Si/Si1-x-yGexCy/Si heterojunction bipolar transistors. IEEE Electron Device Lett. 17:1996;334-337.
33. Beisswanger FJ, Jorke H. Electron transport in bipolar transistors with biaxially strained base layers. IEEE Trans Electron Devices. 43:1996;62-69. The electron transport in the biaxially strained base layers of bipolar transistors is theoretically investigated. The strain splits the sixfold degenerate conduction band of Si and SiGe into twofold and fourfold degenerate states. Intervally scattering, collector saturation currents and Auger recombination are especially considered. of special interest.
34. Holzmann M, Baumgartner P, Engel C, Nötzel JF, Abstreiter G, Schäffler F. Fabrication of n-and p-channel-in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing. Appl Phys Lett. 68:1996;3025-3027.
35. Mastrapasqua M, King CA, Smith PR, Pinto MR. Functional devices based on real space transfer on Si/SiGe structure. IEEE Trans Electron Devices. 43:1996;1671-1677. Functional devices, which can perform logic tasks that would normally require an assembly of several transistors, could reduce the size of logic circuits. A p-type CHINT based on strained SiGe and unstrained Si layers is explained, fabricated and tested with impressive results. of outstanding interest.
36. Choi CH, Park YK, Lee SH, Kim KH. Novel ESD protection transistor including SiGe buried layer to reduce local temperature overheating. IEEE Trans Electron Devices. 43:1996;479-489.
37. Nayak OK, Goto K, Yutani A, Murota J, Shiraki Y. High-mobility strained-SI PMOSFET's. IEEE Trans Electron Devices. 43:1996;1709-1716. For strained Si MOSFET's the channel layer is strained by an underlying relaxed SiGe layer an a Si substrate (virtual SiGe substrate). The band alignment in this device type is explained, the layer properties are characterized and electrical results are given. of outstanding interest.
38. Abramo A, Bude J, Venturi F, Pinto MR. Mobility simulation of a novel Si/SiGe FET structure. IEEE Electron Device Lett. 17:1996;59-61.
39. Arafa M, Fay P, Ismail K, Chu JO, Meyerson BS, Adesida I. High speed p-type SiGe modulation-doped field-effect transistors. IEEE Electron Device Lett. 17:1996;124-126.
40. Arafa M, Fay P, Ismail K, Chu JO, Meyersan BS, Adesida I. DC and RF performance of 0.25 μm p-type SiGe MODFET. IEEE Electron Device Lett. 17:1996;449-451. The device structure, current-voltage characteristics and high frequency properties of a p-channel modulation doped field effect transistor (PMOD-FET) with quarter micron gate length are given in a concise manner. Excellent results are based on a maximum intrinsic transconductance of 280 mS/mm. of outstanding interest.
41. 2 substrate. IEEE Electron Device Lett. 17:1996;205-207.
42. x/Si quantum well structures with high Ge composition. Appl Phys Lett. 66:1995;953-955. Multiple quantum well (MQW) structures with well widths of 3.2 nm were grown by gas source MBE. Growth mode transitions as a function of Ge content were observed by photoluminescence (PL) measurements. of special interest.
43. Schittenheim P, Gail M, Brunner J, Nötzel JF, Abstreiter G. Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100). Appl Phys Lett. 67:1995;1292-1294. Clear luminescence is observed from the fiat wetting layer up to 6 ML coverage. From 5 ML coverage on the luminescence (≈0.87 eV) of the three-dimensional islands can be detected. of special interest.
44. Zeindl HP, Nilsson S. Optimization of luminescent properties with respect to crystal growth temperatures for SiGe single quantum wells grown by molecular beam epitaxy. J Appl Phys. 77:1995;1753-1757.
45. Souifi A, Benyattou T, Guillot G, Bremond G, Dutartre D, Warren P. Effect of rapid thermal annealing on the photoluminescence properties of SiGe/Sl heterostructures. J Appl Phys. 76:1995;4039-4045.
46. 0.5Si photodiodes near 1.3 μm. Appl Phys Lett. 67:1995;566-566. External quantum efficiencies of 17% (λ=0.85 μm) and 1% (λ=1.3 μm) have been measured. of special interest.
47. Pearsall TP, Polatoglou H, Presting H, Kasper E. Optical absorption spectroscopy of Si-Ge alloys and superlattices. Phys Rev B. 54:1996;1545-1546.
48. 0.5 wells and 40 monolayer (5.6 nm) wide unstrained Si barriers is recommended for thermal radiation (λ=10 μm) detection. of special interest.