Vacancy-phosphorus complexes in strained Si1-xGex: Structure and stability

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 11, 2003, Pages

  Sihto, S L ^a   Slotte, J ^a   Lento, J ^a   Saarinen, K ^a   Monakhov, V ^b   Kuznetsov, Y ^b   Svensson, G ^b  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM DERIVATIVE; PHOSPHORUS DERIVATIVE; SILICON DERIVATIVE;

ARTICLE; CALCULATION; COMPLEX FORMATION; ELECTRON; ENERGY; MATHEMATICAL ANALYSIS; MATHEMATICAL PARAMETERS; MEASUREMENT; SEMICONDUCTOR; TEMPERATURE;

EID: 0242427719     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.115307     Document Type: Article

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