Structure and properties of vacancy-oxygen complexes in Si1 − x Gex alloys

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 12, 2004, Pages

  Markevich, V P ^a   Peaker, A R ^a   Coutinho, J ^b   Jones, R ^c   Torres, V J B ^b   oberg S ^d   Briddon, P R ^e   Murin, L I ^f   Dobaczewski, L ^g   Abrosimov, N V ^h  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c UNIVERSITY OF EXETER   (United Kingdom)

^d LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

^f INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^g INSTITUTE OF PHYSICS   (Poland)

^h LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; GERMANIUM; SILICON;

AB INITIO CALCULATION; ARTICLE; ATOM; CHEMICAL BOND; COMPLEX FORMATION; CONFORMATION; CRYSTAL; ENTHALPY; IONIZATION; REACTION ANALYSIS; STRUCTURE ANALYSIS;

EID: 2342579434     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.125218     Document Type: Article

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