Single crystal growth of Si1-xGex by the Czochralski technique

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 657-662

  Abrosimov, N V ^a,b   Rossolenko, S N ^a,b   Alex, V ^b   Gerhardt, A ^b   Schroder W ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SOFTWARE; FEEDBACK CONTROL; LIGHT MEASUREMENT; OPTICAL PROPERTIES; OPTIMIZATION; PROCESS CONTROL; SEMICONDUCTING GERMANIUM COMPOUNDS; SINGLE CRYSTALS; X RAY ANALYSIS;

ABSORPTION EDGE; AUTOMATED CONTROL SYSTEM; CRYSTAL PULLER; CRYSTAL QUALITY; PROCESS PARAMETERS; RESISTANCE HEATING; X RAY LANG TOPOGRAPHY;

CRYSTAL GROWTH FROM MELT;

EID: 0030231266     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00036-X     Document Type: Article

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