Divacancy-related complexes in Si(1-x)Ge(x)

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 525-530

  Khirunenko, L I ^a   Pomozov, Yu V ^a   Sosnin, M G ^a   Trypachko, M O ^a   Duvanskii, A V ^a   Abrosimov, N V ^b   Riemann, H ^b   Lastovskii, S B ^c   Murin, L I ^c   Markevich, V P ^d   Peaker, A R ^d  

^a INSTITUTE OF PHYSICS   (Ukraine)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Alloys; Electron paramagnetic resonance (EPR)

Indexed keywords

ANNEALING; HEAT TREATMENT; PARAMAGNETIC RESONANCE; SILICON ALLOYS;

ABSORPTION BAND; EPR SIGNALS; PRINCIPAL VALUES; TEMPERATURE RANGE;

COMPLEXATION;

EID: 33845219884     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.030     Document Type: Article

References (24)

1. Watkins G.D., and Corbett J.W. Phys Rev 138 (1965) A543
2. Svensson B.G. In: Hull R. (Ed). Properties of crystalline silicon, EMIS data review series no. 20 (1999), INSPEC, London 763
3. Kimerling L.C. In: Urli N.B., and Corbett J.W. (Eds). Radiation effects in semiconductors 1976, Institute of Physics Conference Series no. 31 (1977), IOP, Bristol and London 221
4. Evwarye A.O., and Sun E. J Appl Phys 47 (1976) 3776
5. Brotherton S.D., and Bradley P. J Appl Phys 53 (1982) 5720
6. Svensson B.G., Mohadjeri B., Hallén A., Svensson J.H., and Corbett J.W. Phys Rev B 43 (1991) 2292
7. Hwang G.S., and Goddard III W.A. Phys Rev B 65 (2002) 233205
8. Cheng L.J., Corelli J.C., Corbett J.W., and Watkins G.D. Phys Rev 152 (1966) 761
9. Lee Y.-H., and Corbett J.W. Phys Rev B 13 (1976) 2653
10. Trauwaert M.-A., Vanhellemont J., Maes H.E., Van Bavel A.-M., Langouche G., and Clauws P. Appl Phys Lett 66 (1995) 3056
11. Lindström J.L., Murin L.I., Markevich V.P., Hallberg T., and Svensson B.G. Physica B 273-274 (1999) 291
12. Monakhov E.V., Avset B.S., Hallén A., and Svensson B.G. Phys Rev B 65 (2002) 233207
13. Markevich V.P., Peaker A.R., Lastovskii S.B., Murin L.I., and Lindström J.L. J Phys: Condens Matter 15 (2003) S2779
14. Stallinga P., Johannesen P., Herstrom S., Bonde Nielsen K., Bech Nielsen B., and Byberg J.R. Phys Rev B 58 (1998) 3842
15. Fanciulli M., and Byberg J.R. Phys Rev B 61 (2000) 2657
16. Brelot A, Charlemagne J. In: Proceedings of the international conference on Radiation Effects in Semiconductors, London, New York, Paris, 1971, p. 161.
17. Watkins G.D. IEEE Trans Nucl Sci NS-16 (1969) 13
18. Watkins G.D., Troxell J.R., and Chatterjee A.P. Inst Phys Conf Ser 46 (1979) 16 [Chapter 1]
19. Khirunenko L.I., Shakhovtsov V.I., and Shumov V.V. Sov Phys Semicond 32 (1998) 132
20. Cheng L.J., and Corelli J.C. Phys Rev 152 (1966) 856
21. Monakov E.V., Nylandsted Larsen A., and Kringhø P. J Appl Phys 81 (1996) 1180
22. Larsen A.N. Solid State Phenomena 69-70 (1999) 43
23. Watkins GD. In: Effets des rayonnemente sur les semiconductours, Dunod ed Paris, 1964, p. 97.
24. Ganchenkova M., Nazarov A., and Kuznetsov A. Nucl Instrum Methods B 202 (2003) 107