Cause and prevention of moisture-induced degradation of resistance random access memory nanodevices

ACS Nano

Volumn 7, Issue 3, 2013, Pages 2302-2311

  Yang, Xiang ^a   Choi, Byung Joon ^a   Chen, Albert B K ^a   Chen, I Wei ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

charge transport; dielectric; dielectrophoresis; functional coatings; nanodevice; nanoporosity; thin films

Indexed keywords

DIELECTRIC THIN FILMS; DIELECTROPHORETIC FORCES; ELECTRIC DEGRADATION; FUNCTIONAL COATING; NANO DEVICE; NANOPOROSITY; OXIDATION RESISTANT; RESISTANCE RANDOM ACCESS MEMORY;

CHARGE TRANSFER; DIELECTRIC MATERIALS; ELECTROPHORESIS; MOISTURE; POROSITY; PROTECTIVE COATINGS; THIN FILMS;

NANOSTRUCTURED MATERIALS;

EID: 84875677236     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn3054544     Document Type: Article

References (54)

1. Ngaruiya, J. M.; Venkataraj, S.; Drese, R.; Kappertz, O.; Pedersen, T. P. L.; Wuttig, M. Preparation and Characterization of Tantalum Oxide Films Produced by Reactive DC Magnetron Sputtering Phys. Status Solidi A 2003, 198, 99-110
2. Fang, Q.; Zhang, J. Y. Nano-porous TiN Thin Films Deposited by Reactive Sputtering Method Int. J. Inorg. Mater. 2001, 3, 1193-1196
3. 2 Thin Films Deposited Using Pulsed DC-Magnetron Sputtering Mater. Sci. 2009, 15, 103-107
4. Kim, J. H.; Chung, K. W. Microstructure and Properties of Silicon Nitride Thin Films Deposited by Reactive Bias Magnetron Sputtering J. Appl. Phys. 1998, 83, 5831-5839
5. Zhao, Y.; Toyama, M.; Kita, K.; Kyuno, K.; Toriumi, A. Moisture-Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon Appl. Phys. Lett. 2006, 88, 072904
6. Wang, C. T.; Wu, C. L. Electrical Sensing Properties of Silica Aerogel Thin Films to Humidity Thin Solid Films 2006, 496, 658-664
7. Kim, W.; Javey, A.; Vermesh, O.; Wang, O.; Li, Y. M.; Dai, H. J. Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect Transistors Nano Lett. 2003, 3, 193-198
8. Emel'yanov, A. M. Water-Related Charge Carrier Traps in Thermal Silicon Dioxide Films Prepared in Dry Oxygen Phys. Solid State 2010, 52, 1131-1137
9. Waser, R.; Dittmann, R.; Staikov, G.; Szot, K. Redox-Based Resistive Switching Memories: Nanoionic Mechanisms, Prospects, and Challenges Adv. Mater. 2009, 21, 2632-2663
10. Yang, Y.; Gao, P.; Gaba, S.; Chang, T.; Pan, X.; Lu, W. Observation of Conducting Filament Growth in Nanoscale Resistive Memories Nat. Commun. 2012, 3, 732
11. Waser, R.; Aono, M. Nanoionics-Based Resistive Switching Memories Nat. Mater. 2007, 6, 833-840
12. 2 Resistive Switching Memory Nat. Nanotechnol. 2010, 5, 148-153
13. Lee, D.; Choi, H.; Sim, H.; Choi, D.; Hwang, H.; Lee, M. J.; Seo, S. A.; Yoo, I. K. Resistance Switching of the Nonstoichiometric Zirconium Oxide for Nonvolatile Memory Applications IEEE Electron Device Lett. 2005, 26, 719-721
14. 2 Thin Films Thin Solid Films 2007, 516, 444-448
15. Chai, Y.; Wu, Y.; Takei, K.; Chen, H.-Y.; Yu, S.; Chan, P. C. H.; Javey, A.; Wong, H. S. P. Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon IEEE Trans. Electron Devices 2011, 58, 3933-3939
16. Karpov, I. V.; Kostylev, S. A. SET to RESET Programming in Phase Change Memories IEEE Electron Device Lett. 2006, 27, 808-810
17. Peterson, C. A.; Workman, R. K.; Sarid, D.; Vermeire, B.; Parks, H. G.; Adderton, D.; Maivald, P. Effects of Moisture on Fowler-Nordheim Characterization of Thin Silicon-Oxide Films J. Vac. Sci. Technol., A 1999, 17, 2753-2758
18. Tsuruoka, T.; Terabe, K.; Hasegawa, T.; Valov, I.; Waser, R.; Aono, M. Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches Adv. Funct. Mater. 2012, 22, 70-77
19. Hoflund, G. B.; Corallo, G. R. Electron-Energy-Loss Study of the Oxidation of Polycrystalline Tin Phys. Rev. B 1992, 46, 7110-7120
20. Nagashima, K.; Yanagida, T.; Oka, K.; Kanai, M.; Klamchuen, A.; Kim, J.-S.; Park, B. H.; Kawai, T. Intrinsic Mechanisms of Memristive Switching Nano Lett. 2011, 11, 2114-2118
21. Nagashima, K.; Yanagida, T.; Oka, K.; Kanai, M.; Klamchuen, A.; Rahong, S.; Meng, G.; Horprathum, M.; Xu, B.; Zhuge, F. et al. Prominent Thermodynamical Interaction with Surroundings on Nanoscale Memristive Switching of Metal Oxides Nano Lett. 2012, 12, 5684-5690
22. Lee, S.; Lee, J.; Park, J.; Choi, Y.; Yong, K. Resistive Switching WOx-Au Core-Shell Nanowires with Unexpected Nonwetting Stability Even When Submerged under Water Adv. Mater. 2012, 24, 2418-2423
23. Gomes, H. L.; Rocha, P. R. F.; Kiazadeh, A.; De Leeuw, D. M.; Meskers, S. C. J. Anomalous Temperature Dependence of the Current in a Metal-Oxide-Polymer Resistive Switching Diode J. Phys. D: Appl. Phys. 2011, 44, 025103
24. Knorr, N.; Wirtz, R.; Rosselli, S.; Nelles, G. Field-Absorbed Water Induced Electrochemical Processes in Organic Thin Film Junctions J. Phys. Chem. C 2010, 114, 15791-15796
25. Shoute, L. C. T.; Pekas, N.; Wu, Y.; McCreery, R. L. Redox Driven Conductance Changes for Resistive Memory Appl. Phys. A: Mater. Sci. Process. 2011, 102, 841-850
26. Lee, S.; Kim, W.; Yong, K. Overcoming the Water Vulnerability of Electronic Devices: A Highly Water-Resistant ZnO Nanodevice with Multifunctionality Adv. Mater. 2011, 23, 4398-4402
27. 2 Thin Films with Embedded Pt Nanocrystals Appl. Phys. Lett. 2009, 95, 042104
28. Gao, B.; Zhang, H. W.; Yu, S.; Sun, B.; Liu, L. F.; Liu, X. Y.; Wang, Y.; Han, R. Q.; Kang, J. F.; Yu, B.; Wang, Y. Y. Oxide-Based RRAM: Uniformity Improvement Using a New Material-Oriented Methodology Symp. VLSI Technol. 2009, 30
29. Tsunoda, K.; Kinoshita, K.; Noshiro, H.; Yamazaki, Y.; Iizuka, T.; Ito, Y.; Takahashi, A.; Okano, A.; Sato, Y.; Fukano, T. et al. Low Power and High Speed Switching of Ti-Doped NiO ReRAM under the Unipolar Voltage Source of Less than 3 V IEEE Int. Electron Devices Meet. 2007, 767
30. Chen, A. B. K.; Kim, S. G.; Wang, Y.; Tung, W.-S.; Chen, I. W. A Size-Dependent Nanoscale Metal-Insulator Transition in Random Materials Nat. Nanotechnol. 2011, 6, 237-241
31. Chen, A. B. K.; Choi, B. J.; Yang, X.; Chen, I. W. A Parallel Circuit Model for Multi-state Resistive-Switching Random Access Memory Adv. Funct. Mater. 2012, 22, 546-554
32. 2 Thin Films for ReRAM Adv. Mater. 2011, 23, 3847-3852
33. Yang, X.; Chen, I. W. Dynamic-Load-Enabled Ultra-low Power Multiple-State RRAM Devices Sci. Rep. 2012, 2, 744
34. Oh, M. S.; Yang, B. S.; Lee, J. H.; Oh, S. H.; Lee, U. S.; Kim, Y. J.; Kim, H. J.; Huh, M. S. Improvement of Electrical and Optical Properties of Molybdenum Oxide Thin Films by Ultralow Pressure Sputtering Method J. Vac. Sci. Technol., A 2012, 30, 031501
35. x (2 < x < 2.75) Films J. Appl. Phys. 2005, 97, 083539
36. Greenwood, N. N.; Earnshaw, A. Chemistry of the Elements; Pergamon Press: Oxford, 1984.
37. Pliskin, W. A.; Lehman, H. S. Structural Evaluation of Silicon Oxide Films J. Electrochem. Soc. 1965, 112, 1013-1019
38. Abeles, B. Granular Metal Films. In Applied Solid State Science; Wolfe, R., Ed.; Academic: New York: 1976; Vol. 6, pp 1-117.
39. Doo, V. Y.; Nichols, D. R.; Silvey, G. A. Preparation and Properties of Pyrolytic Silicon Nitride J. Electrochem. Soc. 1966, 113, 1279-1281
40. 2O Adsorbed on Oxides: An Investigation by Near and Mid Infrared Spectroscopy Appl. Catal., A 2006, 307, 13-20
41. Davis, K. M.; Tomozawa, M. An Infrared Spectroscopic Study of Water-Related Species in Silica Glasses J. Non-Cryst. Solids 1996, 201, 177-198
42. Thomas, R. R.; Kaufman, F. B.; Kirleis, J. T.; Belsky, R. A. Wettability of Polished Silicon Oxide Surfaces J. Electrochem. Soc. 1996, 143, 643-648
43. 2 Films Made by Rapid Flame Deposition and In Situ Annealing Langmuir 2009, 25, 12578-12584
44. 4 with a Whisker-like Microstructure Nature 1997, 389, 701-704
45. Won, S.-J.; Jung, H.-S.; Suh, S.; Choi, Y. J.; Lee, N.-I.; Hwang, C. S.; Kim, H. Growth and Electrical Properties of Silicon Oxide Grown by Atomic Layer Deposition Using Bis(ethyl-methyl-amino)silane and Ozone J. Vac. Sci. Technol., A 2012, 30, 01A126
46. Menon, M.; Chen, I. W. Reaction Densification of α-SiAlON. 1. Wetting Behavior and Acid-Based Reactions J. Am. Ceram. Soc. 1995, 78, 545-552
47. Hwang, S. L.; Chen, I. W. Reaction Hot-Pressing of α′-SiAlON and β′-SiAlON Ceramics J. Am. Ceram. Soc. 1994, 77, 165-171
48. Jones, T. B. Electromechanics of Particles; Cambridge University Press: New York, 1995.
49. Michalske, T. A.; Freiman, S. W. A Molecular Mechanism for Stress-Corrosion in Vitreous Silica J. Am. Ceram. Soc. 1983, 6, 284-288
50. Jacobs, D. S.; Chen, I. W. Mechanical and Environmental Factors in the Cyclic and Static Fatigue of Silicon Nitride J. Am. Ceram. Soc. 1994, 77, 1153-1161
51. 3 System Phys. Rev. B 2004, 70, 104409
52. 3 System Phys. Rev. B 2004, 70, 104410
53. Karpov, I. V.; Mitra, M.; Kau, D.; Spadini, G.; Kryukov, Y. A.; Karpov, V. G. Fundamental Drift of Parameters in Chalcogenide Phase Change Memory J. Appl. Phys. 2007, 102, 124503
54. Egami, T. Random Materials: Localization on the Nanoscale Nat. Nanotechnol. 2011, 6, 199-200