Overcoming the water vulnerability of electronic devices: A highly water-resistant ZnO nanodevice with multifunctionality

Advanced Materials

Volumn 23, Issue 38, 2011, Pages 4398-4402

  Lee, Seunghyup ^a   Kim, Wooseok ^a   Yong, Kijung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

nanodevices; resistive switching; superhydrophobicity; ZnO nanorods

Indexed keywords

DEVICE SURFACES; DIRECT CONTACT; ELECTRONIC COMPONENT; ELECTRONIC DEVICE; MODEL SYSTEM; MULTIFUNCTIONALITY; NANO DEVICE; NANO-DEVICES; RESISTIVE SWITCHING; SUPERHYDROPHOBIC; SUPERHYDROPHOBICITY; ZNO; ZNO NANOROD;

EQUIPMENT; HYDROPHOBICITY; NANORODS; NANOSTRUCTURED MATERIALS; SWITCHING SYSTEMS; THERMOELECTRIC EQUIPMENT; ZINC OXIDE;

ELECTRON DEVICES;

NANOTUBE; WATER; ZINC OXIDE;

ARTICLE; CHEMICAL PHENOMENA; CHEMISTRY; ELECTROCHEMICAL ANALYSIS; ELECTRODE; INSTRUMENTATION; METHODOLOGY; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTROCHEMICAL TECHNIQUES; ELECTRODES; HYDROPHOBIC AND HYDROPHILIC INTERACTIONS; NANOTUBES; TRANSISTORS, ELECTRONIC; WATER; ZINC OXIDE;

EID: 80053522317     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201101580     Document Type: Article

References (33)

1. W.-L. Min, B. Jiang, P. Jiang, Adv. Mater. 2008, 20, 3914.
2. Y. Li, J. Zhang, S. Zhu, H. Dong, Z. Wang, Z. Sun, J. Guo, B. J. Yang, Mater. Chem. 2009, 19, 1806.
3. Y. Xiu, S. Zhang, V. Yelundur, A. Rohatgi, D. W. Hess, C. P. Wong, Langmuir 2008, 24, 10421.
4. Y. Li, J. Zhang, S. Zhu, H. Dong, F. Jia, Z. Wang, Z. Sun, L. Zhang, Y. Li, H. Li, W. Xu, B. Yang, Adv. Mater. 2009, 21, 4731.
5. D. Tahk, T.-i. Kim, H. Yoon, M. Choi, K. Shin, K. Y. Suh, Langmuir 2010, 26, 2240.
6. G. A. Somorjai, H. Frei, J. Y. Park, J. Am. Chem. Soc. 2009, 131, 16589.
7. Z. Liu, X. Zhang, T. Murakami, A. Fujishima, Sol. Energy Mater. Sol. Cells 2008, 92, 1434.
8. N.-R. Chiou, C. Lu, J. Guan, L. J. Lee, A. J. Epstein, Nat. Nanotechnol. 2007, 2, 354.
9. X. Yao, Y. Song, L. Jiang, Adv. Mater. 2011, 23, 719.
10. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 2009, 21, 2632.
11. D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, C. S. Hwang, Nat. Nanotechnol. 2010, 5, 148.
12. R. Waser, M. Aono, Nat. Mater. 2007, 6, 833.
13. A. Sawa, Mater. Today 2008, 11, 28.
14. Y. C. Yang, F. Pan, Q. Liu, M. Liu, F. Zeng, Nano Lett. 2009, 9, 1636.
15. S. Lee, H. Kim, D. J. Yun, S. W. Rhee, K. Yong, Appl. Phys. Lett. 2009, 95, 262113.
16. J. W. Seo, J. W. Park, K. S. Lim, J. H. Yang, S. J. Kang, Appl. Phys. Lett. 2008, 93, 223505.
17. G. Kwak, S. Jung, K. Yong, Nanotechnology 2011, 22, 115705.
18. K. Koch, B. Bhushan, W. Barthlott, Soft Matter 2008, 4, 1943.
19. P. F. Carcia, R. S. McLean, M. H. Reilly, J. G. Nunes, Appl. Phys. Lett. 2003, 82, 1117.
20. T. Minami, Semicond. Sci. Technol. 2005, 20, S35.
21. A. Olziersky, P. Barquinha, A. Vila, L. Pereira, G. Goncalves, E. Fortunato, R. Martins, J. R. Morante, J. Appl. Phys. 2010, 108, 064505.
22. S. Yang, C.-S. Hwang, J.-I. Lee, S.-M. Yoon, M.-K. Ryu, K.-I. Cho, S.-H. K. Park, S.-H. Kim, C.-E. Park, J. Jang, Appl. Phys. Lett. 2011, 98, 103515.
23. S. Selvarasah, X. Li, A. Busnaina, M. R. Dokmeci, Appl. Phys. Lett. 2010, 97, 153120.
24. W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, H. Dai, Nano Lett. 2003, 3, 193.
25. E. Artukovic, M. Kaempgen, D. S. Hecht, S. Roth, G. Grüner, Nano Lett. 2005, 5, 757.
26. G. Kwak, M. Seol, Y. Tak, K. Yong, J. Phys. Chem. C 2009, 11, 12085.
27. C. Badre, T. Pauporté, M. Turmine, D. Lincot, Nanotechnology 2007, 18, 365705.
28. L. Gao, A. Y. Fadeev, T. J. McCarthy, MRS Bull. 2008, 33, 747.
29. A. Tuteja, W. Choi, G. H. McKinley, R. E. Cohen, M. F. Rubner, MRS Bull. 2008, 33, 752.
30. A. B. D. Cassie, S. Baxter, Trans. Faraday Soc. 1944, 40, 546.
31. T. Deng, K. K. Varanasi, M. Hsu, N. Bhate, C. Keimel, J. Stein, M. Blohm, Appl. Phys. Lett. 2009, 94, 133109.
32. A. L. Yarin, Annu. Rev. Fluid Mech. 2006, 38, 159.
33. Y. Tak, K. Yong, J. Phys. Chem. B 2005, 109, 19263.