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Volumn 11, Issue 5, 2011, Pages 2114-2118

Intrinsic mechanisms of memristive switching

Author keywords

nanowires; nonvolatile memory; p type oxides; redox; Resistive switching

Indexed keywords

COBALT OXIDES; CONDUCTION MECHANISM; ELECTRICAL NATURE; FASCINATING PHENOMENA; FIELD-EFFECT DEVICES; INTRINSIC MECHANISMS; MEMORY EFFECTS; MULTIPROBE MEASUREMENTS; NANO SCALE; NANOWIRE DEVICES; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY; P-TYPE CONDUCTION; P-TYPE OXIDES; REDOX; RESISTIVE SWITCHING; SINGLE OXIDES; VACANCY-BASED MODEL;

EID: 79955919620     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl200707n     Document Type: Article
Times cited : (111)

References (61)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.