Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 1, 2012, Pages

  Won, Seok Jun ^a,b   Jung, Hyung Suk ^b,c   Suh, Sungin ^a   Choi, Yu Jin ^a   Lee, Nae In ^b   Hwang, Cheol Seong ^c   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GROWING SURFACES; LOW TEMPERATURES; SATURATION BEHAVIOR; SI-H BONDS; SILICON OXIDE THIN FILMS; SUBSTRATE TEMPERATURE;

ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC PROPERTIES; FILM GROWTH; OXIDE FILMS; OZONE; OZONE LAYER; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH;

SILICON OXIDES;

EID: 84862942667     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3664122     Document Type: Article

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