Prominent thermodynamical interaction with surroundings on nanoscale memristive switching of metal oxides

Nano Letters

Volumn 12, Issue 11, 2012, Pages 5684-5690

  Nagashima, Kazuki ^a   Yanagida, Takeshi ^a,b   Oka, Keisuke ^a   Kanai, Masaki ^a   Klamchuen, Annop ^a   Rahong, Sakon ^a   Meng, Gang ^a   Horprathum, Mati ^a,c   Xu, Bo ^a   Zhuge, Fuwei ^a   He, Yong ^a   Park, Bae Ho ^d   Kawai, Tomoji ^a,d  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL ELECTRONICS AND COMPUTER TECHNOLOGY CENTER   (Thailand)

^d Konkuk University   (South Korea)

Author keywords

Memristive switching; metal oxides; planar device; redox; surrounding effect

Indexed keywords

A-STABILITY; AMBIENT PRESSURES; HIGH-DENSITY DEVICES; MEMRISTIVE BEHAVIOR; METAL OXIDES; NANO SCALE; NON-STOICHIOMETRY; PASSIVATION LAYER; PLANAR DEVICES; REDOX; SURROUNDING EFFECT; TIO;

ATMOSPHERIC PRESSURE; COBALT COMPOUNDS; NANOTECHNOLOGY; PASSIVATION;

SWITCHING;

EID: 84869162736     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl302880a     Document Type: Article

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