A size-dependent nanoscale metal-insulator transition in random materials

Nature Nanotechnology

Volumn 6, Issue 4, 2011, Pages 237-241

  Chen, Albert B K ^a,b   Kim, Soo Gil ^a,b   Wang, Yudi ^a,b   Tung, Wei Shao ^a   Chen, I Wei ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC FIELDS; METAL INSULATOR BOUNDARIES; NANOMETALS; PEROVSKITE; PEROVSKITE SOLAR CELLS; SEMICONDUCTOR INSULATOR BOUNDARIES; SINGLE CRYSTALS;

APPLIED MAGNETIC FIELDS; DISORDERED ELECTRONIC SYSTEMS; IMPURITY CONCENTRATION; MACROSCOPIC SAMPLE; NANOSCALE METALS; RANDOM MATERIALS; RANDOM STRUCTURES; THIN FILM SYSTEMS;

METAL INSULATOR TRANSITION;

PEROVSKITE; PLATINUM;

ARTICLE; CONDUCTOR; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD; ELECTRON; FILM; INSULATOR ELEMENT; NANOTECHNOLOGY; PRIORITY JOURNAL; TEMPERATURE SENSITIVITY; ULTRAVIOLET RADIATION;

EID: 79955827194     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2011.21     Document Type: Article

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