Redox driven conductance changes for resistive memory

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 841-850

  Shoute, Lian C T ^a,b   Pekas, Nikola ^a   Wu, Yiliang ^c   McCreery, Richard L ^a,b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF ALBERTA   (Canada)

^c XEROX RESEARCH CENTRE OF CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; AU SURFACES; COVALENTLY BONDED; DEVICE COMPOSITION; DIRECT CONTACT; HYDROXIDE IONS; OXIDATION STATE; POLARON FORMATION; POLY-THIOPHENE; POLYMER OXIDATION; RESISTANCE SWITCHING; RESISTIVE SWITCHING MEMORIES; SPECTROSCOPIC INFORMATION; TIO; WATER REDUCTION;

CONDUCTING POLYMERS; CONDUCTIVE FILMS; HETEROJUNCTIONS; ORGANIC CONDUCTORS; OXIDATION; POLARONS; POLYMER FILMS; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; THIOPHENE; TITANIUM DIOXIDE;

REDOX REACTIONS;

EID: 79959369913     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6268-5     Document Type: Article

References (49)

1. J.C. Scott, L.D. Bozano, Adv. Mater. 19, 1452 (2007).
2. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21, 2632 (2009).
3. J. Wu, R.L. McCreery, J. Electrochem. Soc. 156, P29 (2009).
4. J. Wu, K. Mobley, R. McCreery, J. Chem. Phys. 126, 24704 (2007).
5. R. McCreery, J. Wu, R.J. Kalakodimi, Phys. Chem. Chem. Phys. 8, 2572 (2006).
6. A. Nowak, R. McCreery, J. Am. Chem. Soc. 126, 16621 (2004).
7. S. Barman, F. Deng, R. McCreery, J. Am. Chem. Soc. 130, 11073 (2008).
8. M.J. Panzer, C.D. Frisbie, Adv. Funct. Mater. 16, 1051 (2006).
9. L.G. Kaake, Y. Zou, M.J. Panzer, C.D. Frisbie, X.Y. Zhu, J. Am. Chem. Soc. 129, 7824 (2007).
10. J.H. Zhao, D.J. Thomson, M. Pilapil, R.G. Pillai, G.M.A. Rahman, M.S. Freund, Nanotechnology 21, 134003 (2010).
11. G.M.A. Rahman, J.-H. Zhao, D.J. Thomson, M.S. Freund, J. Am. Chem. Soc. 131, 15600 (2009).
12. J.H. Zhao, D.J. Thomson, R.G. Pillai, M.S. Freund, Appl. Phys. Lett. 94, 092113 (2009).
13. R.G. Pillai, J.H. Zhao, M.S. Freund, D.J. Thomson, Adv. Mater. 20, 49 (2008).
14. J.H. Krieger, S.V. Trubin, S.B. Vaschenko, N.F. Yudanov, Synth. Met. 122, 199 (2001).
15. S.G. Robinson, D.H. Johnston, C.D. Weber, M.C. Lonergan, Chem. Mater. 22, 241 (2010).
16. H.J. Lee, Z.X. Jin, A.N. Aleshin, J.Y. Lee, M.J. Goh, K. Akagi, Y.S. Kim, D.W. Kim, Y.W. Park, J. Am. Chem. Soc. 126, 16722 (2004).
17. J.L. Bredas, R. Silbey, D.S. Boudreaux, R.R. Chance, J. Am. Chem. Soc. 105, 6555 (1983).
18. J. Nowotny, T. Bak, M.K. Nowotny, L.R. Sheppard, J. Phys. Chem. C 112, 602 (2008).
19. J. Nowotny, T. Bak, M.K. Nowotny, L.R. Sheppard, J. Phys. Chem. C 112, 590 (2008).
20. P. Knauth, H.L. Tuller, J. Appl. Phys. 85, 897 (1999).
21. D. Mardare, C. Baban, R. Gavrila, M. Modreanu, G.I. Rusu, Surf. Sci. 507-510, 468 (2002).
22. S. John Paul, D.P. Matthew, J.J. Yang, A. Shaul, A.L.D. Kilcoyne, M.-R. Gilberto, R.S. Williams, Adv. Mater. 22, 3573 (2010).
23. D.B. Strukov, R.S. Williams, Appl. Phys. A, Mater. Sci. Process. 94, 515 (2009).
24. N. Gergel-Hackett, B. Hamadani, B. Dunlap, J. Suehle, C. Richter, C. Hacker, D. Gundlach, IEEE Electron Device Lett. 30, 706 (2009).
25. J.J. Yang, M.D. Pickett, X. Li, D. Ohlberg, D. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429 (2008).
26. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, Nature 453, 80 (2008).
27. R. McCreery, Method for conductance switching in molecular electronic junctions, U.S. Patent # 6, 855, 950 (2005).
28. A.O. Solak, S. Ranganathan, T. Itoh, R.L. McCreery, Electrochem. Solid-State Lett. 5, E43 (2002).
29. A.O. Solak, L.R. Eichorst, W.J. Clark, R.L. McCreery, Anal. Chem. 75, 296 (2003).
30. A.P. Bonifas, R.L. McCreery, Chem. Mater. 20, 3849 (2008).
31. F. Anariba, S.H. DuVall, R.L. McCreery, Anal. Chem. 75, 3837 (2003).
32. Y. Gao, T.P. Martin, E.T. Niles, A.J. Wise, A.K. Thomas, J.K. Grey, J. Phys. Chem. C 114, 15121 (2010).
33. E. Klimov, W. Li, X. Yang, G.G. Hoffmann, J. Loos, Macromolecules 39, 4493 (2006).
34. G. Louarn, M. Trznadel, J.P. Buisson, J. Laska, A. Pron, M. Lapkowski, S. Lefrant, J. Phys. Chem. 100, 12532 (1996).
35. M. Baibarac, M. Lapkowski, A. Pron, S. Lefrant, I. Baltog, J. Raman Spectrosc. 29, 825 (1998).
36. A.S. Dhoot, G.M. Wang, D. Moses, A.J. Heeger, Phys. Rev. Lett. 96, 246403 (2006).
37. D. Ofer, R.M. Crooks, M.S. Wrighton, J. Am. Chem. Soc. 112, 7869 (1990).
38. N. Vukmirovic, L.-W. Wang, J. Phys. Chem. B 113, 409 (2008).
39. E.L. Ratcliff, J.L. Jenkins, K. Nebesny, N.R. Armstrong, Chem. Mater. 20, 5796 (2008).
40. J. Hou, Z. Tan, Y. Yan, Y. He, C. Yang, Y. Li, J. Am. Chem. Soc. 128, 4911 (2006).
41. B.S. Ong, Y.Wu, P. Liu, S. Gardner, Adv. Mater. 17, 1141 (2005).
42. Y.Wu, P. Liu, S. Gardner, B.S. Ong, Chem.Mater. 17, 221 (2004).
43. B.S. Ong, Y.Wu, P. Liu, S. Gardner, J. Am. Chem. Soc. 126, 3378 (2004).
44. S. Ranganathan, R.L. McCreery, S.M. Majji, M. Madou, J. Electrochem. Soc. 147, 277 (2000).
45. X. Yu, C. Jeong Ho, L. Jiyoul, P.P. Ruden, C.D. Frisbie, Adv. Mater. 21, 2174 (2009).
46. M.J. Panzer, C.D. Frisbie, J. Am. Chem. Soc. 129, 6599 (2007).
47. S.H. Szczepankiewicz, J.A. Moss, M.R. Hoffmann, J. Phys.Chem. B 106, 7654 (2002).
48. S.H. Szczepankiewicz, J.A. Moss, M.R. Hoffmann, J. Phys. Chem. B 106, 2922 (2002).
49. T. Driscoll, J. Quinn, S. Klein, H.T. Kim, B.J. Kim, V.P. Yu, M.D. Ventra, D.N. Basov, Appl. Phys. Lett. 97, 093502 (2010).