Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 × 2 transfer-matrix algebra

Journal of Applied Physics

Volumn 113, Issue 7, 2013, Pages

  Katsidis, C C ^a   Ajagunna, A O ^a,b   Georgakilas, A ^a,b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC LAYERS; ARBITRARY MULTILAYERS; DRIFT MOBILITIES; ELECTRON ACCUMULATION; ELECTRON CONCENTRATION; FOURIER TRANSFORM INFRARED; FREE CARRIERS; FREE ELECTRON CONCENTRATION; HALL FACTOR; HETEROEPITAXIAL; HETEROEPITAXIAL LAYERS; INN FILMS; INN LAYERS; MID-INFRARED SPECTRAL RANGE; MOBILITY VALUE; NON DESTRUCTIVE; OPTICAL CHARACTERIZATION; OPTICAL MEASUREMENT; OPTICAL REFLECTANCE; OPTICAL RESPONSE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PRINCIPAL AXES; REFLECTANCE SPECTROSCOPY; SURFACE AND INTERFACES; THREE-LAYER MODELS; TRANSFER MATRIXES;

CARRIER CONCENTRATION; EPILAYERS; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; HALL MOBILITY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICAL DATA PROCESSING; TOOLS; TRANSFER MATRIX METHOD;

OPTICAL MULTILAYERS;

EID: 84874590399     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792259     Document Type: Article

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