Effects of electron concentration on the optical absorption edge of InN

Applied Physics Letters

Volumn 84, Issue 15, 2004, Pages 2805-2807

  Wu, J ^a   Walukiewicz, W ^a   Li, S X ^b   Armitage, R ^b   Ho, J C ^b   Weber, E R ^b   Haller, E E ^b   Lu, Hai ^c   Schaff, William J ^c   Barcz, A ^d   Jakiela, R ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c Cornell University   (United States)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENT; BAND GAPS; BURSTEIN-MOSS SHIFT; ELECTRON CONCENTRATION; HALL MOBILITIES;

ELECTRICAL ENGINEERING; ELECTRON MOBILITY; EPITAXIAL GROWTH; EXTRAPOLATION; FERMI LEVEL; HALL EFFECT; HYDROGEN; LIGHT ABSORPTION; MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; NITRIDES; NUCLEATION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

INDIUM COMPOUNDS;

EID: 2342565119     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1704853     Document Type: Article

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