Characterization of InN layers grown by high-pressure chemical vapor deposition

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  Alevli, M ^a   Durkaya, G ^a   Weerasekara, A ^a   Perera, A G U ^a   Dietz, N ^a   Fenwick, W ^b   Woods, V ^b   Ferguson, I ^b  

^a GEORGIA STATE UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; FULL WIDTH AT HALF MAXIMUM (FWHM); HIGH PRESSURE CHEMICAL VAPOR DEPOSITION (HPCVD); OPTICAL DIELECTRIC FUNCTIONS;

CARRIER CONCENTRATION; GALLIUM NITRIDE; INFRARED RADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; REFLECTION; STOICHIOMETRY; X RAY DIFFRACTION;

INDIUM COMPOUNDS;

EID: 33748677929     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2352797     Document Type: Article

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