Electron mobilities, hall factors, and scattering processes of n-type GaN epilayers studied by infrared reflection and Hall measurements

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 11, 2003, Pages 1133131-1133134

  Fu, Y ^a   Willander, M ^a   Li, Z F ^b   Lu, W ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; METAL; ORGANIC COMPOUND;

ARTICLE; CALCULATION; CONCENTRATION (PARAMETERS); ELECTRON; ENERGY; FILM; HEATING; INFRARED RADIATION; IONIZATION; OPTICS; REFLECTOMETRY; VAPOR;

EID: 0038557057     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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