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Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 246-252

Structural properties of 10  μm thick InN grown on sapphire (0001)

Author keywords

Dislocations; InN; Molecular beam epitaxy; Mosaicity; Transmission electron microscopy; X ray diffraction

Indexed keywords

DISLOCATIONS (CRYSTALS); FILM GROWTH; GRAIN BOUNDARIES; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 33845199358     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.012     Document Type: Article
Times cited : (32)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.