Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 4, 2007, Pages 967-970

  Bhatta, R P ^a   Thoms, B D ^a   Weerasekera, A ^a   Perera, A G U ^a   Alevli, M ^a   Dietz, N ^a  

^a GEORGIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DROPS; ELECTRON ENERGY LOSS SPECTROSCOPY; PLASMONS;

INFRARED REFLECTANCE; PLASMON EXCITATIONS; ROOM TEMPERATURE INFRARED REFLECTION MEASUREMENTS;

INDIUM COMPOUNDS;

EID: 34547266338     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2712185     Document Type: Article

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