Sintering of silver-aluminum nanopaste with varying aluminum weight percent for use as a high-temperature die-attach material

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 2, Issue 12, 2012, Pages 1940-1948

  Manikam, Vemal Raja ^a   Razak, Khairunisak Abdul ^a   Cheong, Kuan Yew ^a  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

Author keywords

Die attach; interconnect; nanoscale Ag; nanoscale Al; sintering

Indexed keywords

AL CONTENT; AL-NANOPARTICLES; DEVICE OPERATIONS; DIE-ATTACH MATERIALS; HIGH TEMPERATURE; HIGH-TEMPERATURE DIE-ATTACH; HIGH-TEMPERATURE PACKAGING; INTERCONNECT; NANO SCALE; NANOSCALE AL; THERMAL AND ELECTRICAL CONDUCTIVITY; THERMAL EXPANSION ANALYSIS; WEIGHT PERCENT;

ALUMINUM; ELECTRIC CONDUCTIVITY; NANOPARTICLES; NANOTECHNOLOGY; SINTERING;

SILVER;

EID: 84871040486     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2012.2209425     Document Type: Article

References (69)

1. K. Suganuma, "Advances in lead-free electronics soldering," Curr. Opin. Solid State Mater. Sci., vol. 5, no. 1, pp. 55-64, 2001. (Pubitemid 32320603)
2. K. S. Kim, S. H. Huh, and K. Suganuma, "Joining reliability of SnAgCu series solder alloys," Microelectron. Rel., vol. 43, no. 2, pp. 259-267, 2003.
3. I. E. Anderson, "Development of Sn-Ag-Cu and Sn-Ag-Cu-X alloys for Pb-free electronic solder applications," J. Mater. Sci., Mater. Electron., vol. 18, pp. 55-76, Sep. 2007. (Pubitemid 44963677)
4. Z. Zhang and G. Q. Lu, "Pressure-assisted low-temperature sintering of silver paste as an alternative die-attach solution to solder reflow," IEEE Trans. Electron. Packag. Manuf., vol. 25, no. 4, pp. 279-283, Oct. 2002.
5. V. R. Manikam and K. Y. Cheong, "Die attach materials for high temperature applications: A review," IEEE Trans. Compon. Packag. Technol., vol. 1, no. 4, pp. 457-478, Apr. 2011.
6. C. H. Shun, C. K. Yew, and I. A. Badri, "A review on die attach materials for SiC-based high-temperature power devices," Metall. Mater. Trans. B, vol. 41, no. 4, pp. 824-832, 2010.
7. M. Pecht, Y. Fukuda, and S. Rajagopal, "The impact of lead-free legislation exemptions on the electronics industry," IEEE Trans. Electron. Packag. Manuf., vol. 27, no. 4, pp. 221-232, Oct. 2004. (Pubitemid 40319407)
8. The European Parliament and the Council of the European Union, "EU RoHS 2 recast directive 2011/65/EU services on the restriction of the use of certain hazardous substances in electrical and electronic equipment," Off. J. Eur. Union, pp. 88-110, Jul. 2011.
9. R. Kisiel and Z. Szczepa'nski, "Die-attachment solutions for SiC power devices," Microelectron. Rel., vol. 49, no. 6, pp. 627-629, Apr. 2009.
10. C. Datian, W. Zhifa, W. Huabo, and L. Jinwen, "Preparation and property of novel-type Au-19.25Ag-12.80Ge solder alloy," Rare Metal Mater. Eng., vol. 37, no. 4, pp. 690-693, Apr. 2008.
11. G. Humpston and D. M. Jacobson, "Gold in gallium arsenide die-attach technology," Gold Bulletin, vol. 22, no. 3, pp. 79-91, 1989.
12. S. J. Kim, K. S. Kim, K. Suganuma, and G. Izuta, "Interfacial reactions of Si die attachment with Zn-Sn and Au-20Sn high temperature leadfree solders on Cu substrates," J. Electron. Mater., vol. 38, no. 6, pp. 873-883, 2009.
13. K. Meyyappan, P. Mccluskey, and L. Y. Chen, "Thermomechanical analysis of gold-based SiC die-attach assembly," IEEE Trans. Dev. Mater. Rel., vol. 3, no. 4, pp. 152-158, Dec. 2003.
14. Y. V. Naidich, V. Zhuravlev, and N. Krasovskaya, "The wettability of silicon carbide by Au-Si alloys," Mater. Sci. Eng. A, vol. 245, no. 2, pp. 293-299, May 1998. (Pubitemid 128368544)
15. T. Shimizu, H. Ishikawa, I. Ohnuma, and K. Ishida, "Zn-Al-Mg-Ga alloys as Pb-free solder for die-attaching use," J. Electron. Mater., vol. 28, no. 11, pp. 1172-1175, 1999. (Pubitemid 32082850)
16. M. Rettenmayr, P. Lambracht, B. Kempf, and C. Tschudin, "Zn-Al based alloys as Pb-free solders for die attach," J. Electron. Mater., vol. 31, no. 4, pp. 278-285, 2002. (Pubitemid 34475065)
17. S. J. Kim, K. S. Kim, S. S. Kim, and K. Suganuma, "Interfacial reaction and die attach properties of Zn-Sn high-temperature solders," J. Electron. Mater., vol. 38 no. 2, pp. 266-272, 2009.
18. S. J. Kim, K. S. Kim, S. S. Kim, K. Suganuma, and G. Izuta, "Improving the reliability of Si die attachment with Zn-Sn-based high-temperature Pb-free solder using a TiN diffusion barrier," J. Electron. Mater., vol. 38, no. 12, pp. 2668-2675, 2009.
19. M. Y. N. Nguyen, "Low stress silver-glass die attach material," IEEE Trans. Comp., Hybrids, Manuf. Technol., vol. 13, no. 3, pp. 478-483, Sep. 1990.
20. C. R. Chang and J. H. Jean, "Effects of silver-paste formulation on camber development during the cofiring of a silver-based, lowtemperature- cofired ceramic package," J. Amer. Ceramic Soc., vol. 81, no. 11, pp. 2805-2814, 1998.
21. S. Rane, V. Puri, and D. Amalnerkar, "A study on sintering and microstructure development of fritless silver thick film conductors," J. Mater. Sci., Mater. Electron., vol. 11, no. 9, pp. 667-674, 2000.
22. M. Rettenmayr, P. Lambracht, B. Kempf, and M. Graff, "High melting Pb-free solder alloys for die-attach applications," Adv. Eng. Mater., vol. 7, no. 10, pp. 965-969, 2005. (Pubitemid 41728518)
23. K. Suganuma, S. J. Kim, and K. S. Kim, "High-temperature lead-free solders: Properties and possibilities," J. Minerals Metals Mater. Soc., vol. 61, no. 1, pp. 64-71, Jan. 2009.
24. R. W. Chuang and C. C. Lee, "Silver-indium joints produced at low temperature for high temperature devices," IEEE Trans. Compon. Packag. Technol., vol. 25, no. 3, pp. 453-458, Sep. 2002.
25. W. C. Ricky and C. L. Chin, "Silver-indium joints produced at low temperature for high temperature devices," IEEE Trans. Compon. Packag. Technol., vol. 25, no. 3, pp. 453-458, Sep. 2002.
26. J. G. Bai, Z. Z. Zhang, J. N. Calata, and G. Q. Lu, "Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material," IEEE Trans. Compon. Packag. Technol., vol. 29, no. 3, pp. 589-593, Sep. 2006. (Pubitemid 44375461)
27. J. G. Bai, T. G. Lei, J. N. Calata, and G. Q. Lu, "Control of nanosilver sintering attained through organic binder burnout," J. Mater. Res., vol. 22, no. 12, pp. 3494-3500, Dec. 2007.
28. T. Wang, X. Chen, G. Q. Lu, and G. Y. Lei, "Low temperature sintering with nano-silver paste in die attached interconnections," J. Electron. Mater., vol. 36, no. 10, pp. 1333-1340, 2007.
29. J. G. Bai, T. G. Lei, J. N. Calata, and G. Q. Lu, "Processing and characterization of nanosilver pastes for die-attaching SiC devices," IEEE Trans. Electron. Packag. Manuf., vol. 30, no. 4, pp. 241-245, Oct. 2007. (Pubitemid 47577904)
30. J. G. Bai, J. Yin, Z. Z. Zhang, G. Q. Lu, and J. D. V. Wyk, "High temperature operation of SiC power devices by low-temperature sintered silver die attachment," IEEE Trans. Adv. Packag., vol. 30, no. 3, pp. 506- 510, Aug. 2007. (Pubitemid 47308009)
31. X. Cao, T. Wang, K. D. T. Ngo, and G. Q. Lu, "Characterization of lead-free solder and sintered nano-silver die-attach layers using thermal impedance," IEEE Trans. Compon. Packag. Technol., vol. 1, no. 4, pp. 495-501, Apr. 2011.
32. W. D. Callister, Materials Science and Engineering: An Introduction, 5th ed. New York: Wiley, 2000.
33. M. Kearns, "Development and applications of ultrafine aluminium powders," Mater. Sci. Eng. A, vols. 375-377, pp. 120-126, Jul. 2004. (Pubitemid 38927052)
34. W. J. Parker, R. J. Jenkins, C. P. Butler, and G. L. Abbott, "Flash method of determining thermal diffusivity, heat capacity, and thermal conductivity," J. Appl. Phys., vol. 32, no. 9, pp. 1679-1684, 1961.
35. D. P. H. Hasselman and K. Y. Donaldson, "Effects of detector nonlinearity and specimen size on the apparent thermal-diffusivity of NIST-8425 graphite," Int. J. Thermophys., vol. 11, no. 3, pp. 573-585, 1990.
36. M. J. O'Neill, "Measurement of specific heat functions by differential scanning calorimetry," Anal. Chem., vol. 38, no. 10, pp. 1331-1336, 1966.
37. P. J. Haines and F.W.Wilburn, Thermal Methods of Analysis: Principles, Applications and Problems, P. J. Haines, Ed. London, U.K.: Blackie Academic, 1995, ch. 3, pp. 335-336.
38. Y. He, "Heat capacity, thermal conductivity, and thermal expansion of barium titanate-based ceramics," Thermochim. Acta, vol. 419, nos. 1-2, pp. 135-141, 2004.
39. P. Zeng, S. Zajac, P. C. Clapp, and J. A. Rifkin, "Nanoparticle sintering simulations," Mater. Sci. Eng. A, vol. 252, nos. 1-2, pp. 301-306, 1998. (Pubitemid 129521043)
40. F. Tang, I. E. Anderson, and S. B. Biner, "Solid state sintering and consolidation of Al powders and Al matrix composites," J. Light Metals, vol. 2, no. 4, pp. 201-214, 2002.
41. E. Menendez, J. Sort, A. Concustell, S. Surinach, J. Nogues, and M. D. Baro, "Microstructural evolution during solid-state sintering of ball-milled nanocomposite WC-10 mass% Co powders," Nanotechnology, vol. 18, no. 18, pp. 185609-185611, 2007.
42. R. M. German, Sintering Theory and Practice. New York: Wiley, 1996, pp. 68-221.
43. J. K. Mackenzie and R. Shuttleworth, "A phenomenological theory of sintering," Proc. Phys. Soc., vol. 62, no. 12, pp. 833-852, 1949.
44. Y. E. Geguzin and Y. I. Boiko, "Self-diffusion coefficients obtained in model sintering experiments," Soviet Powder Metall. Metal Ceram., vol. 21, no. 4, pp. 271-273, 1982.
45. V. A. Levin, V. V. Lokhin, and K. M. Zingerman, "Effective elastic properties of porous materials with randomly dispersed pores: Finite deformation," J. Appl. Mech., vol. 67, no. 4, pp. 667-670, 2000.
46. H. Kvande, "Two hundred years of aluminum . . . or is it aluminium?" J. Miner. Metals Mater. Soc., vol. 60, no. 8, pp. 23-24, 2008.
47. V. M. Dekov, V. Arnaudov, F. Munnik, T. B. Boycheva, and S. Fiore, "Native aluminum: Does it exist?" Amer. Mineral., vol. 94, nos. 8-9, pp. 1283-1286, 2009.
48. T. Noda, T. Mano, and N. Koguchi, "Fabrication of Al nanoparticles and their electrical properties studied by capacitance-voltage measurements," Appl. Surf. Sci., vol. 252, no. 15, pp. 5408-5410, 2006. (Pubitemid 43817250)
49. É. B. Perchik, V. B. Evseeva, B. G. Chernov, and Y. K. Shalabutov, "Effect of doping additives on the electrical properties of alumina ceramic and the mechanism of its interaction with a steel melt," Refract. Ind. Ceramics, vol. 20, nos. 7-8, pp. 500-503, 1979. (Pubitemid 10463913)
50. Y. I. Ogita, S. Ohsone, T. Kudoh, and F. Sakamoto, "Electrical properties of alumina films grown on Si at low temperature using catalytic CVD," Thin Solid Films, vol. 516, no. 5, pp. 836-838, 2008. (Pubitemid 350212991)
51. V. V. Skorokhod and V. V. Panichkina, "The electrical conductivity of porous sintered materials from copper fibers," Powder Metall. Metal Ceram., vol. 4, no. 3, pp. 220-222, 1963.
52. P. S. Liu, T. F. Li, and C. Fu, "Relationship between electrical resistivity and porosity for porous metals," Mater. Sci. Eng. A, vol. 268, nos. 1-2, pp. 208-215, 1999.
53. M. Kashiwagi, S. Hirata, K. Harada, Y. Zheng, K. Miyazaki, M. Yahiro, and C. Adachi, "Enhanced figure of merit of a porous thin film of bismuth antimony telluride," Appl. Phys. Lett., vol. 98, no. 2, pp. 023114- 1-023114-3, 2011.
54. P. S. Gaal, M. A. Thermitus, and D. E. Stroe, "Thermal conductivity measurements using the flash method," J. Thermal Anal. Calorimet., vol. 78, no. 1, pp. 185-189, 2004.
55. C. A. Crouse, E. Shin, P. T. Murray, and J. E. Spowart, "Solution assisted laser ablation synthesis of discrete aluminum nanoparticles," Mater. Lett., vol. 64, no. 3, pp. 271-274, 2010.
56. J. N. Calata, T. G. Lei, and G. Q. Lu, "Sintered nanosilver paste for high temperature power semiconductor device attachment," Int. J. Mater. Product Technol., vol. 34, nos. 1-2, pp. 95-110, 2009.
57. T. G. Lei, J. N. Calata, G. Q. Lu, X. Chen, and S. Luo, "Low temperature sintering of nanoscale silver paste for attaching large area (>100 mm2) chips," IEEE Trans. Compon. Packag. Technol., vol. 33, no. 1, pp. 98-104, Mar. 2010.
58. Y. Shi, W. Fang, Z. Xia, Y. Lei, F. Guo, and X. Li, "Investigation of rare earth doped Bi-Ag high temperature solders," J. Mater. Sci., Mater. Electron., vol. 21, no. 9, pp. 875-881, 2010.
59. Z. H. Shui, R. Zhang, W. Chen, and D. Xuan, "Effects of mineral admixtures on the thermal expansion properties of hardened cement paste," Construct. Build. Mater., vol. 24, no. 9, pp. 1761-1767, 2010.
60. Y. Goueffon, C. Mabru, M. Labarrére, L. Arurault, C. Tonon, and P. Guigue, "Investigations into the coefficient of thermal expansion of porous films prepared on AA7175 T7351 by anodizing in sulphuric acid electrolyte," Surf. Coat. Technol., vol. 205, no. 7, pp. 2643-2648, 2010.
61. Y. Kuru, M. Wohlschlögel, U. Welzel, and E. J. Mittemeijer, "Crystallite size dependence of the coefficient of thermal expansion of metals," Appl. Phys. Lett., vol. 90, no. 24, pp. 243113-1-243113-3, Jun. 2007.
62. A. A. Nuzhdin, "Special features of solid-phase transformations in sintered titanium powders and iron," Powder Metall. Metal Ceram., vol. 31, no. 12, pp. 1022-1025, 1992.
63. J. N. Lalena, N. F. Dean, and M. W. Weiser, "Experimental investigation of Ge-doped Bi-11Ag as a new Pb-free solder alloy for power die attachment," J. Electron. Mater., vol. 31, no. 11, pp. 1244-1249, 2002.
64. N. Heuck, G. Palm, T. Sauerberg, A. Stranz, A. Waag, and A. Bakin, "SiC-die-attachment for high temperature applications," Mater. Sci. Forum, vols. 645-648, pp. 741-744, Apr. 2010.
65. F. Miyashiro, N. Iwase, A. Tsuge, F. Ueno, M. Nakahashi, and T. Takahashi, "High thermal conductivity aluminum nitride ceramic substrates and packages," IEEE Trans. Comp., Hybrids, Manuf. Technol., vol. 13, no. 2, pp. 313-319, Jun. 1990. (Pubitemid 20724958)
66. M. R. Werner and W. R. Fahrner, "Review on materials, microsensors, systems, and devices for high-temperature and harsh-environment applications," IEEE Trans. Ind. Electron., vol. 48, no. 2, pp. 249-257, Apr. 2001. (Pubitemid 32416251)
67. A. R. Powell and L. B. Rowland, "SiC materials-progress, status, and potential roadblocks," Proc. IEEE, vol. 90, no. 6, pp. 942-955, Jun. 2002. (Pubitemid 43785868)
68. J. L. Hudgins, G. S. Simin, E. Santi, and M. A. Khan, "An assessment of wide bandgap semiconductors for power devices," IEEE Trans. Power Electron., vol. 18, no. 3, pp. 907-914, May 2003.
69. P. Hagler, R. W. Johnson, and L. Y. Chen, "SiC die attach metallurgy and processes for applications up to 500 °C," IEEE Trans. Compon., Packag. Manuf. Technol., vol. 1, no. 4, pp. 630-639, Apr. 2011.