Electrical properties of alumina films grown on Si at low temperature using catalytic CVD

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 836-838

  Ogita, Yoh Ichiro ^a   Ohsone, Satoshi ^a   Kudoh, Tsugutomo ^a   Sakamoto, Fumitaka ^b  

^a KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

^b NONE   (Japan)

Author keywords

Al2O3; Cat CVD; Dielectric constant; High k gate; Interface trapping density; Leakage current; XPS

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; GROWTH (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH-K GATE; INTERFACE TRAPPING DENSITY;

THIN FILMS;

EID: 36749103162     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.193     Document Type: Article

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