SiC die attach metallurgy and processes for applications up to 500°C

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 1, Issue 4, 2011, Pages 630-639

  Hagler, P ^a,b   Johnson, R W ^a   Chen, Liang Yu ^c  

^a AUBURN UNIVERSITY   (United States)

^b ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

^c NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Die attach; die metallization; high temperature; liquid transient phase bonding

Indexed keywords

DIE-ATTACH; ELECTROPLATED NI; FILM METALLIZATION; HIGH OPERATING TEMPERATURE; HIGH TEMPERATURE; METALLIZATIONS; PACKAGE DESIGNS; TRANSIENT PHASE;

CHIP SCALE PACKAGES; EUTECTICS; GOLD; METALLIZING; METALLURGY; SILICON CARBIDE; SURFACE ANALYSIS; THERMAL CYCLING; THICK FILMS; TIN;

TIN ALLOYS;

EID: 84855872723     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2011.2106160     Document Type: Article

References (14)

1. P. G. Neudeck, D. Spry, L. Chen, C.W. Chang, G. M. Beheim, R. Okojie, L. Evans, R. Meredith, T. Ferrier, M. J. Krasowski, and N. F. Prokop, "6H-SiC transistor integrated circuits demonstrating prolonged operation at 500 °C," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 2008, pp. 95-102.
2. C. Göbl, "Low temperature sinter technology die attachment for automotive power electronic applications," in Proc. Int. Conf. Autom. Power Electron., Paris, France, Jun. 2006.
3. G.-Q. Lu, J. N. Calata, and T. G. Lei, "Low-temperature sintering of nanoscale silver paste for power chip attachment," in Proc. 5th Int. Conf. Integr. Power Electron. Syst., Nuremberg, Germany, Mar. 2008, pp. 1-5.
4. R. Kisiel, and Z. Szczepánski, "Die-attachment solutions for SiC power devices," Microelectron. Rel., vol. 49, no. 6, pp. 627-629, Jun. 2009.
5. J. G. Bai, Z. Z. Zhang, J. N. Calata, and G.-Q. Lu, "Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material," IEEE Trans. Compon. Packag. Technol., vol. 29, no. 3, pp. 589-593, Sep. 2006.
6. P. Quintero, T. Oberc, and P. McCluskey, "Reliability assessment of high temperature lead-free device attach technologies," in Proc. 58th Electron. Compon. Technol. Conf., Lake Buena Vista, FL, 2008, pp. 2131-2138.
7. P. Quintero, "Development of a shifting melting point Ag-In paste via transient liquid phase sintering for high temperature environments," Ph.D dissertation, Dept. Mech. Eng., Maryland Univ., College Park, 2008.
8. W. W. So and C. C. Lee, "High temperature joints manufactured at low temperature," in Proc. 48th IEEE Electron. Compon. Technol. Conf., Seattle, WA, May 1998, pp. 284-291.
9. R. W. Johnson, P. Zheng, P. Henson, and L. Chen, "Metallurgy for SiC die attach for operation at 500 °C," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 2010, pp. 8-17.
10. G. Q. Lu, Y. Mei, X. Chen, D. Ibitayo, and S. Luo, "Migration of sintered nanosilver die-attach material on alumina substrates at high temperature," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 2010, pp. 26-31.
11. R. W. Johnson, C. Wang, Y. Liu, and J. D. Scofield, "Power device packaging technologies for extreme environments," IEEE Trans. Electron. Packag. Manuf., vol. 30, no. 3, pp. 182-191, Jul. 2007.
12. R. Zhang, R. W. Johnson, V. Tilak, T. Zhang, and D. Shaddock, "Characterization of thick film technology for 300 °C packaging," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 2010, pp. 97-107.
13. T. B. Massalski, Binary Alloy Phase Diagrams, vol. 1, 2nd ed. Materials Park, OH: ASM, 1990, p. 434.
14. P. Zheng, A.Wiggins, R.W. Johnson, R. V. Frampton, S. J. Adam, and L. Peltz, "Die attach for high temperature electronics packaging," in Proc. Int. High Temp. Electron. Conf., Albuquerque, NM, May 2008, pp. 1-7.