SiC materials - Progress, status, and potential roadblocks

Proceedings of the IEEE

Volumn 90, Issue 6, 2002, Pages 942-955

  Powell, Adrian R ^b,d   Rowland, Larry B ^a,c,e  

^a IEEE

^b Arkansas Power Electronics International Inc   (United States)

^c GE GLOBAL RESEARCH   (United States)

^d SiC Crystal Growth Group   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Blue light emitting diodes (LEDs); High power switching; Hot wall epitaxy; Physical vapor transport; SiC substrates; Vapor phase epitaxy

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MICROWAVE DEVICES; RESEARCH AND DEVELOPMENT MANAGEMENT; VAPOR PHASE EPITAXY;

BLUE LIGHT-EMITTING DIODES (LEDS); HIGH POWER SWITCHING; HOT-WALL EPITAXY; PHYSICAL VAPOR TRANSPORT; SIC SUBSTRATES;

SILICON CARBIDE;

EID: 10844255354     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2002.1021560     Document Type: Article

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