SiC-die-attachment for high temperature applications

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 741-744

  Heuck, N ^a   Palm, G ^a   Sauerberg, T ^a   Stranz, A ^a   Waag, A ^a   Bakin, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Chip attachment; Low temperature joining technique; Reliability; Thermal expansion

Indexed keywords

EXPANSION; FILLING; HIGH TEMPERATURE APPLICATIONS; JOINING; RELIABILITY; SILICON CARBIDE; SINTERING; TEMPERATURE; THERMAL CONDUCTIVITY; THERMAL EXPANSION; TITANIUM CARBIDE; TITANIUM COMPOUNDS;

CHIP ATTACHMENT; ELECTRONIC DEVICE; FILLING MATERIALS; JOINING TECHNIQUES; LOW TEMPERATURES; LOW THERMAL EXPANSION; POWDER MATERIAL; POWDER MIXTURES;

SUBSTRATES;

EID: 77955444743     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.741     Document Type: Conference Paper

References (5)

1. H. Schwarzbauer, R. Kuhnert: IEEE Transactions on Industry Applications, Vol. 27 (1991), p. 93 doi:10.1109/28.67536. (Pubitemid 21663317)
2. C. Mertens: Die Niedertemperatur-Verbindungstechnik der Leistungselektronik (VDI Verlag, Germany 2004).
3. J. G. Bai, G.-Q. Lu: IEEE Transactions on Device and Materials Reliability, Vol. 6 (2006), p. 436 doi:10.1109/TDMR.2006.882196. (Pubitemid 44711796)
4. J. G. Bai, J. Yin, Z. Zhang, G.-Q. Lu: IEEE Transactions on Advanced Packaging, Vol. 30 (2007), p. 506-510 doi:10.1109/TADVP.2007.898628. (Pubitemid 47308009)
5. N. Heuck, A. Bakin, A. Waag, patent pending, Braunschweig 2008.