Fundamental study of extreme UV resist line edge roughness: Characterization, experiment, and modeling

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 6, 2012, Pages

  Ayothi, Ramakrishnan ^a   Singh, Lovejeet ^a   Hishiro, Yoshi ^a   Pitera, Jed W ^b   Sundberg, Linda K ^b   Sanchez, Martha I ^b   Bozano, Luisa ^b   Virwani, Kumar ^b   Truong, Hoa D ^b   Arellano, Noel ^b   Petrillo, Karen ^c   Wallraff, Gregory M ^b   Hinsberg, William D ^d   Hua, Yueming ^e  

^a JSR Micro   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c IBM   (United States)

^d Columbia Hill Technical Consulting ^*  (United States)

^e Park Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC THEORY; ATOMIC FORCE; COMPUTATIONAL MODELING; DETAILED MODELS; DEVELOPMENT PROCESS; DISSOLUTION PROCESS; EUV RESISTS; EXPERIMENTAL CHARACTERIZATION; EXTREME ULTRAVIOLETS; EXTREME UV; FLOW CELLS; IMAGE LINES; LENGTH SCALE; LINE EDGE ROUGHNESS; MATERIAL PROPERTY; MODELING RESULTS; MOLECULAR ARCHITECTURE; MOLECULAR GLASS; NEGATIVE TONES; NON DESTRUCTIVE; PARALLEL SUPERCOMPUTER; POLYMER MOLECULAR WEIGHT; POSITIVE-TONE; PRACTICAL ISSUES; RESIST FILMS; RESIST LINE EDGES; SIDEWALL ROUGHNESS; SIMULATION METHODS; SPATIAL FREQUENCY; TIME EVOLUTIONS; TRILAYERS;

ATOMIC FORCE MICROSCOPY; COMPUTATION THEORY; COMPUTER SIMULATION; DISSOLUTION; ORGANIC SOLVENTS; POLYMER FILMS; POLYMERIC GLASS; SUPERCOMPUTERS; SURFACE ROUGHNESS;

ROUGHNESS MEASUREMENT;

EID: 84870328094     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4767235     Document Type: Article

References (27)

1. P. P. Naulleau, C. N. Anderson, and S. George, J. Photopolym. Sci. Technol. 24, 637 (2011). 10.2494/photopolymer.24.637
2. W. Hinsberg, F. Houle, M. Sanchez, J. Hoffnagle, G. Wallraff, D. Medeiros, G. Gallatin, and J. Cobb, Proc. SPIE 5039, 1 (2003). 10.1117/12.487739
3. T. H. Fedynyshyn, R. F. Sinta, D. K. Astolfi, A. Cabral, J. Roberts, and R. Meagley, Proc. SPIE 6153, 615315 (2006). 10.1117/12.654437
4. Y. Ma, H. J. Levinson, and T. Wallow, Proc. SPIE 6518, 651824 (2007). 10.1117/12.712388
5. D. He and F. Cerrina, J. Vac. Sci. Technol. B 16, 3748 (1998). 10.1116/1.590401
6. G. W. Reynolds and J. W. Taylor, J. Vac. Sci. Technol. B 17, 334 (1999). 10.1116/1.590560
7. D. L. Goldfarb, J. Vac. Sci. Technol. B 22, 647 (2004). 10.1116/1.1667513
8. A. E. Grigorescu and C. W. Hagen, Nanotechnology 20, 292001 (2009). 10.1088/0957-4484/20/29/292001
9. G. M. Gallatin, Proc. SPIE 5754, 38 (2005). 10.117/12.607233
10. J. Sha, J-K. Lee, S. Kang, V. M. Prabhu, C. L. Soles, P. V. Bonnesen, and C. K. Ober, Chem. Mater. 22, 3093 (2010). 10.1021/cm9038939
11. W. Hinsberg, F. A. Houle, J. Hoffnagle, M. Sanchez, G. Wallraff, M. Morrison, and S. Frank, J. Vac. Sci. Technol. B 16, 3689 (1998). 10.1116/1.590392
12. G. M. Gallatin, F. A. Houle, and J. L. Cobb, J. Vac. Sci. Technol. B 21, 3172 (2003). 10.1116/1.1629294
13. P. Naulleau and G. Gallatin, J. Vac. Sci. Technol. B 26, 1903 (2008). 10.1116/1.3010712
14. S. S. Mehta, Proc. SPIE 8325, 832506 (2012). 10.1117/12.917560
15. F. A. Houle, W. D. Hinsberg, and M. A. Sanchez, Macromolecules 35, 8591 (2002). 10.1021/ma0209702
16. C. Mack, J. Vac. Sci. Technol. B 27, 1122 (2009). 10.1116/1.3117346
17. L. K. Sundberg, G. M. Wallraff, A. M. Friz, A. E. Zweber, Z. Benes, R. D. Lovchik, E. Delamarche, and W. D. Hinsberg, Proc. SPIE 7639, 76392S-2 (2010). 10.1117/12.849145
18. Y. Hua, C. Buenviaje-Coggins, Y.-H. Lee, J.-M. Lee, K.-D. Ryang, and S.-I. Park, Proc. SPIE 7971, 797118 (2011). 10.1117/12.879545
19. S. J. Plimpton, J. Comput. Phys. 117, 1 (1995); source code for LAMMPS is available at lammps.sandia.gov 10.1006/jcph.1995.1039
20. IBM Blue Gene Team, IBM J. Res. Dev. 52, 199 (2008). 10.1147/rd.521.0199
21. T. Itani and J. J. Santillan, J. Vac. Sci. Technol. B 27, 2986 (2009). 10.1116/1.3258151
22. R. Gronheid, J. Vac. Sci. Technol. B 28, C6S1 (2010). 10.1116/1.3498751
23. T. Itani and J. J. Santillan, Appl. Phys. Express 3, 061601 (2010). 10.1143/APEX.3.061601
24. S. A. George, P. P. Naulleau, A. Krishnamoorthy, Z. Wu, E. W. Rutter, Jr., J. T. Kennedy, S. Y. Xie, K. Y. Flanigan, and T. I. Wallow, Proc. SPIE 7636, 763605 (2010). 10.1117/12.848405
25. P. Faurie, J. Foucher, and A. L. Foucher, Proc. SPIE 7520, 75200F-2 (2009). 10.1117/12.837311
26. R. L. Brainard, J. Cobb, and C. A. Cutler, J. Photopolym. Sci. Technol. 16, 401 (2003). 10.2494/photopolymer.16.401
27. See supplementary material at http://dx.doi.org/10.1116/1.4767235 E-JVTBD9-30-389206 for representation and illustrations of mesoscale structures of molecular glass and polymer resist models, the process of molding the developed resist line edge and plots of resist sensitivity versus surface roughness data for PTD/NTD development.