Characterization of line-edge roughness (LER) propagation from resists: Underlayer interfaces in ultrathin resist films

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  George, Simi A ^a   Naulleau, Patrick P ^a   Krishnamoorthy, Ahila ^b   Wu, Zeyu ^b   Rutter Jr , Edward W ^b   Kennedy, Joseph T ^b   Xie, Song Yuan ^b   Flanigan, Kyle Y ^c   Wallow, Thomas I ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b HONEYWELL   (United States)

^c Mallinckrodt Baker Corporation   (United States)

^d IBM MICROELECTRONICS   (United States)

Author keywords

3D SEM; EUV; inorganic underlayers; LER; resist sidewall; resist substrate interface; sidewall roughness; ultrathin resists

Indexed keywords

SEM; SIDEWALL ROUGHNESS; SUBSTRATE INTERFACE; ULTRA-THIN; UNDERLAYERS;

CHEMICAL PROPERTIES; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; THREE DIMENSIONAL; ULTRATHIN FILMS;

ROUGHNESS MEASUREMENT;

EID: 77953451247     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.848405     Document Type: Conference Paper

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