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Volumn 24, Issue 6, 2011, Pages 637-642

EUV resists: Illuminating the challenges

Author keywords

Extreme ultraviolet; Line edge roughness; Photoresist; Shot noise

Indexed keywords


EID: 84855791748     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.24.637     Document Type: Article
Times cited : (7)

References (19)
  • 1
    • 77953449273 scopus 로고    scopus 로고
    • The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch
    • 76361J-1
    • P. Naulleau, et al., "The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch, " Proc. SPIE 7636, 76361J-1 (2010).
    • (2010) Proc. SPIE , vol.7636
    • Naulleau, P.1
  • 3
    • 0041592534 scopus 로고    scopus 로고
    • The line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization
    • P. Naulleau and G. Gallatin, "The line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization, " Appl. Opt. 42, 3390-3397 (2003).
    • (2003) Appl. Opt. , vol.42 , pp. 3390-3397
    • Naulleau, P.1    Gallatin, G.2
  • 4
    • 0032654746 scopus 로고    scopus 로고
    • Effects of mask roughness and condenser scattering in EUVL systems
    • N. Beaudry, T. Milster, "Effects of mask roughness and condenser scattering in EUVL systems, " Proc. SPIE. 3676, 653-662 (1999).
    • (1999) Proc. SPIE. , vol.3676 , pp. 653-662
    • Beaudry, N.1    Milster, T.2
  • 5
    • 3142692472 scopus 로고    scopus 로고
    • The relevance of maskroughness-induced printed line-edge roughness in recent and future EUV lithography tests
    • P. Naulleau, "The relevance of maskroughness-induced printed line-edge roughness in recent and future EUV lithography tests, " Appl. Opt. 43, 4025-4032 (2004).
    • (2004) Appl. Opt. , vol.43 , pp. 4025-4032
    • Naulleau, P.1
  • 6
    • 49749106687 scopus 로고    scopus 로고
    • System-level line-edge roughness limits in extreme ultraviolet lithography
    • P. Naulleau, D. Niakoula, G. Zhang, "System-level line-edge roughness limits in extreme ultraviolet lithography, " J. Vac. Sci. Technol. B 26, 1289-1293 (2008).
    • (2008) J. Vac. Sci. Technol. B , vol.26 , pp. 1289-1293
    • Naulleau, P.1    Niakoula, D.2    Zhang, G.3
  • 7
    • 25144499519 scopus 로고    scopus 로고
    • Resist blur and line edge roughness
    • G. Gallatin, "Resist blur and line edge roughness, " Proc. SPIE 5754, 38-52 (2005).
    • (2005) Proc. SPIE , vol.5754 , pp. 38-52
    • Gallatin, G.1
  • 8
    • 79955128612 scopus 로고    scopus 로고
    • The effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer
    • B, to be published
    • P. Naulleau and G. Gallatin, "The effect of resist on the transfer of line-edge roughness spatial metrics from mask to wafer, " J. Vac. Sci. Technol. B, to be published (2011).
    • (2011) J. Vac. Sci. Technol.
    • Naulleau, P.1    Gallatin, G.2
  • 9
    • 77953530681 scopus 로고    scopus 로고
    • Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model
    • S. Robertson, J. Biafore, M. Smith, M. Reilly, J. Wandell, "Predictive linewidth roughness and CDU simulation using a calibrated physical stochastic resist model, " Proc. SPIE 7639, 763934 (2010).
    • (2010) Proc. SPIE , vol.7639 , pp. 763934
    • Robertson, S.1    Biafore, J.2    Smith, M.3    Reilly, M.4    Wandell, J.5
  • 10
    • 77953505796 scopus 로고    scopus 로고
    • Stochastic approach to modeling photoresist development
    • C. A. Mack, "Stochastic approach to modeling photoresist development", J. Vac. Sci. Technol. B 27, 1122-1128 (2009).
    • (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 1122-1128
    • Mack, C.A.1
  • 12
    • 0040707393 scopus 로고    scopus 로고
    • Measuring acid generation efficiency in chemically amplified resists with all three beams
    • C. Szamanda, et al., "Measuring acid generation efficiency in chemically amplified resists with all three beams, " J. Vac. Sci. Technol. B 17, 3356-3361 (1999);
    • (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 3356-3361
    • Szamanda, C.1
  • 14
    • 65849111019 scopus 로고    scopus 로고
    • Underlayer designs to enhance the performance of EUV resists
    • H. Xua, J. Blackwell, T. Younkin, K. Min, "Underlayer designs to enhance the performance of EUV resists, " Proc. SPIE 7273, 72731J (2009).
    • (2009) Proc. SPIE , vol.7273
    • Xua, H.1    Blackwell, J.2    Younkin, T.3    Min, K.4
  • 17
    • 77953451247 scopus 로고    scopus 로고
    • Characterization of line-edge roughness (LER) propagation from resists: Underlayer interfaces in ultrathin resist films
    • S. George, P. Naulleau, A. Krishnamoorthy, Z. Wu, E. Rutter, J. Kennedy, S. Xie, K. Flanigan, T. Wallow, "Characterization of line-edge roughness (LER) propagation from resists: Underlayer interfaces in ultrathin resist films, " P roc. SPIE 7636, 763605 (2010)
    • (2010) Proc. SPIE , vol.7636 , pp. 763605
    • George, S.1    Naulleau, P.2    Krishnamoorthy, A.3    Wu, Z.4    Rutter, E.5    Kennedy, J.6    Xie, S.7    Flanigan, K.8    Wallow, T.9


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.