A method to characterize pattern density effects: Chemical flare and develop loading

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7639, Issue , 2010, Pages

  Sundberg, Linda K ^a   Wallraff, Gregory M ^a   Friz, Alexander M ^a   Zweber, Amy E ^b   Benes, Zdenek ^b   Lovchik, Robert D ^c   Delamarche, Emmanuel ^c   Hinsberg, William D ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM   (United States)

^c IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Chemical flare; density effects; develop loading; microloading; proximity effects

Indexed keywords

CRITICAL DIMENSION; DENSITY EFFECTS; DETRIMENTAL EFFECTS; FEATURE SIZES; FLOW CELLS; MICROLOADING; OPTICAL LITHOGRAPHY; PATTERN DENSITY; PATTERN DENSITY EFFECTS; POTENTIAL SOURCES; PROXIMITY EFFECTS; SYSTEMATIC STUDY; SYSTEMATIC VARIATION;

ACIDS; LOADING;

PHOTORESISTS;

EID: 77953498799     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.849145     Document Type: Conference Paper

References (18)

1. Brunner, T., Chen, Z. and Scheer, K. S., "A new long range proximity effect in chemically amplified photoresist processes: 'chemical flare'," Proc. SPIE 5753, 261 (2005).
2. Deguchi, K., Nakamura, J., Kawai, Y., Nakanishi, K., Okada, I., Fukuda, M. Oda, M. and Kochiya, H. "Phantom Exposures of Chemically Amplified Resists Caused by Acids Generated in Environmental Air in Synchrotron Radiation Lithography," J. Vac. Sci. Technol. B, 17, 2103 (1999).
3. Kawai, Y., Deguchi, K. and Nakamura, J., "Phantom Exposure of Chemically Amplified Resists in KrF Excimer Laser Lithography," Jpn. J. Appl. Phys. 38, 6994 (1999).
4. Sipani, V., Kewley, D. A., Jain, K. Byers, E. R., Daybell, B. and Krauth, A., "Characterization of Array CD Uniformity with Respect to Pattern Density in 193nm Dry Photolithography," Proc. SPIE 6923, 69233O-1 (2008).
5. Wallow, T., Plat, M., Zhang, Z., MacDonald, B., Bernard, J., Romero, J., La Fontaine, B. and Levinson, H. J., "Characterization of Photoacid Redeposition in 193nm Photoresists," Proc. SPIE 6519, 65190T-1 (2007).
6. Kyoda, H., Okouchi, A., Kim, H., Yamamoto, T. and Yoshihara, K., "Improvement of CD Controllability in Development Process," Proc. SPIE 5039, 1353 (2003).
7. Sullivan, D., Okawa, Y., Sugawara, K., Benes, Z. and Kotani, J., "Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists," Proc. SPIE 6349, 634905 (2006).
8. Benes, Z. and Kotani, J., "Pattern Density and process related CD corrections at 32 nm node," Proc. SPIE 6730, 67304A (2007).
9. Jackson, C., Buck, P., Cohen, S., Garg, V., Howard, C., Keifer, R., Manfredo, J. and Tsou, J., "DUV laser lithography for photomask fabrication," Proc. SPIE 5256, 30 (2003).
10. Watanabe, J., Yamazaki, T., Tanabe, M., Komizo, T., Zweber, A. E. and Smith, A. C., "Investigation of the develop process for high precision patterning," Proc. SPIE 7379, 73790B (2009).
11. Kang, M-K., Lee, J-H., Kim, S-Y., Kim, B-G., Woo, S-G. and Cho, H-K., "The study of CD error on mid-local pattern area caused by develop loading effect," Proc. SPIE 6730, 67300H (2007).
12. Huang, T., Wang, W., Huang, C-Y., Tseng, N., Guo, T-J., Shih, C-L. and Wu, W-B., "Develop Loading Effects on Lithography I-line Process," Proc. SPIE 7140, 71403J (2008).
13. Ha, T-J., Lee, Y-M., Chooi, B. K., Choi, Y-K. and Han, O., "Improvement of Develop loading Effect in FEP-171 Process," Proc. SPIE 5446, 118 (2004).
14. Han, H-S., Moon, S-G., Yoon, J.B., Kim, B-G., Moon, S-Y., Choi, S-W. and Han, W-S., "Quantitative analysis of develop loading effect and its application," Proc. SPIE 5567, 213(2004).
15. Courboin, D., Choi, J-W., Jung, S-H., Baek, S-H. and Kim, L-J., "High flow rate development: Process optimization using Megasonic Immersion Development (MID)," Proc. SPIE 5567, 220 (2004).
16. He, B., Tait, N. and Regnier, F., "Fabrication of Nanocolumns for Liquid Chromatography," Anal. Chem., 70, 3790 (1998).
17. Laminar flow is in effect when a fluid (or gas) flows in parallel layers, with no disruption between the layers; this is in contrast to turbulent flow. See http://en.wikipedia.org/wiki/Laminar-flow.
18. Lee, J. N., Park, C. and Whitesides, G. M., "Solvent Compatibility of Poly(dimethylsiloxane)-Based Microfluidic Devices," Anal. Chem., 75, 6544 (2003).