Assessment of negative tone development challenges

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8325, Issue , 2012, Pages

  Mehta, Sohan Singh ^a   Xu, Yongan ^b   Landie, Guillaume ^c   Chauhan, Vikrant ^a   Burns, Sean D ^b   Lawson, Peggy ^b   Hamieh, Bassem ^c   Wandel, Jerome ^a   Glodde, Martin ^b   Sun, Yu Yang ^a   Kelling, Mark ^a   Thomas, Alan ^b   Kim, Jeong Soo ^a   Chen, James ^b   Kato, Hirokazu ^d   Tseng, Chiahsun ^b   Koay, Chiew Seng ^b   Matsui, Yoshinori ^e   Burkhardt, Martin ^b   Yin, Yunpeng ^b   Horak, David ^b   Chen, Shyng Tsong ^b   Mignot, Yann ^c   Loquet, Yannick ^c   Colburn, Matthew ^b   Arnold, John ^b   Spooner, Terry ^b   Huli, Lior ^f   Hetzer, Dave ^f   Cantone, Jason ^a   Kawakami, Shinichiro ^f   Dunn, Shannon ^f   more..

^a IBM MICROELECTRONICS   (United States)

^b IBM   (United States)

^c STMICROELECTRONICS   (Italy)

^d Toshiba America Inc   (United States)

^e Renesas   (United States)

^f TEL TECHNOLOGY CENTER   (United States)

Author keywords

Adhesion; Negative tone development; Resist thickness loss; SiARC

Indexed keywords

ANTI REFLECTIVE COATINGS; CONTACT HOLES; COST OF OWNERSHIP; DEFECTIVITY; NEGATIVE TONES; OPTICAL PROXIMITY CORRECTIONS; PATTERN COLLAPSE; PATTERNING TECHNOLOGY; POSITIVE TONE; POSITIVE-TONE RESISTS; RESIST MATERIALS; RESIST THICKNESS; SIARC; TECHNOLOGY NODES; YIELD TEST;

COBALT COMPOUNDS; ELECTRON BEAM LITHOGRAPHY; PHOTORESISTS; SILICON WAFERS; SPACE APPLICATIONS; TECHNOLOGY; WAFER BONDING;

ADHESION;

EID: 84861047538     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.917560     Document Type: Conference Paper

References (6)

1. Patel, K., Lawson, M., Varanasi, P., Madeiros, D., Walraff, G., et al, "IBM-JSR 193nm Negative Tone Resist: Polymer Design, Material Properties, and Lithographic Performance." Proc. SPIE 5376, 94 (2004).
2. T.A.Brunner, C. Fonseca, "Optimum tone for various feature types: positive versus negative", SPIE Proc. 4345, 30 (2001).
3. Mack, C., [Fundamental Principles of Optical Lithography], John Wiley & Sons, Ltd., 205- 209, 224-226 (2007).
4. J. Bekeart et al. "Comparing positive and negative tone development process for printing the metal and contact layers of the 32- and 22-nm nodes" JM3, Dec 23rd, 2010.
5. G. Landie, Y. Xu, S. Burns, et al., "Fundamental investigation of negative tone development for the 22nm node and beyond".
6. Cantone, J., Petrillo, K., Xu, Y., Landie, G., et al, "Negative Tone Imaging (NTI) at the 22nm Node: Process and Material Development." Proc. SPIE 7972, 21 (2011).